Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains
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Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains Zon, Thanavorn Poempool, Suwit Kiravittaya, Suwat Sopitpan, Supachok Thainoi, Songphol Kanjanachuchai, Somchai Ratanathammaphan and Somsak Panyakeow MRS Advances / FirstView Article / July 2016, pp 1 - 6 DOI: 10.1557/adv.2016.172, Published online: 01 March 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116001729 How to cite this article: Zon, Thanavorn Poempool, Suwit Kiravittaya, Suwat Sopitpan, Supachok Thainoi, Songphol Kanjanachuchai, Somchai Ratanathammaphan and Somsak Panyakeow Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains. MRS Advances, Available on CJO 2016 doi:10.1557/adv.2016.172 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.172
Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains Zon1, Thanavorn Poempool1, Suwit Kiravittaya2, Suwat Sopitpan3, Supachok Thainoi1, Songphol Kanjanachuchai1, Somchai Ratanathammaphan1 and Somsak Panyakeow1 1
Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand 2 Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok, Thailand 3 Thailand Microelectronic Center (TMEC), National Science and Technology Agency (NSTDA), Chachoensao, Thailand
ABSTRACT The effects of GaAs anti-phase domains (APDs) on the growth of GaSb quantum dots (QDs) are investigated by molecular beam epitaxial growth of GaAs on Ge (001) substrate. Ge is a group-IV element and GaAs is a polar III-V compound semiconductor. Due to polar/non polar interface, GaAs APDs are formed. Initial formation of APD relates to a non-uniform growth of high index GaAs surfaces. However, due to high sticking coefficient of Sb atoms at low substrate growth temperature, GaSb QDs can be formed on the whole surface of the sample without any effects from APD boundary. The buffer layer growth temperature is one of the key roles to control the APDs formation. Therefore we tried to adjust the optimum conditions such as buffer layer thickness and growth temperature to get nearly flat sample surface with large APDs for high QDs density (~ 8×109 dots/cm2). Low-temperature photoluminescence is conducted and GaSb QDs peak is observed at the energy range of 1.0 eV-1.3 eV. INTRODUCTION GaSb/GaAs quantum dot (QD) has the staggered type-II band alignment, which is attractive in many aspects. In staggered type-II band alignment, the conduction band and valence band of GaSb QDs have higher energy level than those of the GaAs matrix. Therefore excited/injected electrons will locat
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