Investigation of MgAlON Films on Electron Emission Properties
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1174-V06-11
Investigation of MgAlON Films on Electron Emission Properties Mikihiko Nishitani1,2, Masahiro Sakai2, Masaharu Terauchi1 ,Yukihiro Morita1 and Yasushi Yamauchi3 1 Co-operation Laboratory of Panasonic, Osaka University, Suita, Osaka, Japan 2
Image Devices Development Center, Panasonic Corporation, Moriguchi, Osaka, Japan
3
National Institute of Material Science (NIMS), Tsukuba, Ibaraki, Japan
ABSTRACT The film of MgO-AlN system was manufactured by the conventional magnetron sputtering process. It is observed that a Fermi level could be raised by increasing AlN composition, confirmed by ultraviolet (UV) photon energy dependence of the electronic emission, and investigated with XPS that the surface reaction, such as surface hydroxide / carbonate of MgO, could be suppressed in addition of AlN. The glow discharge characteristics for MgAlON films were evaluated from the minimum pressure that a glow discharge is started under constant RF power, which correspond to the result of the analysis for the secondary electron emission coefficient (γ) , using Metastable De-excitation Spectroscopy (MDS). INTRODUCTION MgO is commercialized as a protective film of the plasma display with Ne/Xe discharge gas, since MgO is transparent, and sputtering tolerance is high, and the secondary electron emission coefficient (γ) for the Ne ion, which is necessary for the low voltage of the plasma discharge, is high. It will be more necessary to design the material with the high secondary electron emission coefficient (γ) for Xe ion to realize the plasma discharge which is low voltage with high efficiency in plasma display [1]. So far, it was suggested CaO, SrO, BaO or the composite materials of those [2]. However, due to the ionic bond of those materials, surface reaction of hydroxide / carbonate proceeds in the atmosphere quickly, and it is difficult to control the secondary electron emission coefficient (γ) . As a result, the oxide of the alkaline-earth metal does not reach practical use. On the other hand, we think that we may manufacture a film which has high secondary electron emission coefficient (γ) with surface stability, using MgO-AlN system. That system can be controlled the energy differences from a vacuum level to a Fermi level (a work function) with the use of NEA (Negative Electron Affinity) of AlN [3]. And, the Response to Scientfic deficiencies 2. (revised) system. The system could be expected to result in occupied states near the maximum of the valence band with the nitrogen incorporation compensated by electrons from Al of Mg site,
similar to TiO2-XNX[3]. And the instability of the surface of MgO may be changed with the covalent bond of AlN. In this study, we try to design the material with MgO-AlN system to meet the demand of the plasma display which can expect high electron emission by the Xe ion irradiation with the surface stability. EXPERIMENTAL DETAILS The film of MgO-AlN system was manufactured by the conventional RF magnetron sputtering with MgO, AlN sintering target of 2 inch and Al foil sheet and MgO
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