Investigation of Optical Properties of Nitrogen Incorporated Sb based Quantum Well and Quantum Dots for Infrared Sensors
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Investigation of Optical Properties of Nitrogen Incorporated Sb based Quantum Well and Quantum Dots for Infrared Sensors Application Seongsin M Kim1, Homan B Yuen1, Fariba Hatami2, Akihiro Moto3, Alan Chin4, and James S Harris1 1 Stanford University, stanford, CA, 94305 2 Humboldt-University at Berlin, Berlin, Germany 3 Innovation Core SEI, Inc, Santa Clara, CA, Santa Clara, CA, 95051 4 NASA Ames Research Center, Moffett Field, CA, 94035 ABSTRACT We report on the growth and characterization of a new dilute nitride, InNAsSb/InAs, by solid source molecular beam epitaxy. Optimizing growth conditions for nitrogen incorporation has resulted in high-quality InNAsSb epilayers without any structural degradation, as confirmed by high-resolution x-ray diffraction. Optical properties were investigated by temperature dependent and excitation power dependent photoluminescence. We obtained mid-infrared luminescence around 4 µm at low temperature, which reveals strong carrier localization behavior at low temperature induced by nitrogen interacted with antimony. The band alignment of InNAsSb/InAs can be type-I and instead of conventional type-II, InAsSb/InAs, and a conduction band offset, Ec,of ~102meV was obtained. INTRODUCTION The development of mid-infrared (MIR) and far-infrared (FIR) semiconductor laser diodes and detectors has been an on-going research topic because of the great interest in developing compact systems for high-resolution gas spectroscopy, military countermeasurement, free space communication, and low-cost medical diagnostics. Most bio-molecules and chemical and biological agents based on proteins have strong absorption and resonance fingerprints between the MIR and FIR range of 3 to 15 µm. In addition, the MIR wavelength range contains strong fundamental absorption lines of almost all gas species of interest for atmospheric measurement. Widespread and portable applications of IR lasers in this wavelength range require higher operating temperature, low power consumption, and, potentially, broad wavelength tuning to be useful for sensing these agents. Recent, newly-developed III-V dilute nitride materials have interesting physical properties which may be beneficial to enable MIR and FIR devices. The addition of small amounts of nitrogen to III-V semiconductors dramatically increases the wavelength[1,2] due to the unique band interactions[3,4], between nitrogen and its host material. Incorporating nitrogen into narrow-gap materials is very attractive because it can reduce the energy gap and enable emission beyond the FIR, a feat not possible with conventional III-V semiconductors. In addition, nitrogen in these materials will increase the electron effective mass, suppressing Auger recombination. There has been great success with GaAs-based dilute nitrides for long wavelength lasers[5]. However, there are very few reports of dilute nitride development in narrow gap materials[6,7], and optical properties of dilute nitride narrow gap materials have not been reported elsewhere to our knowledge.
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