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0955-I16-04

Investigation of The Electrical and Chemical Properties of Plasma-Treated AlGaN X. A. Cao1, H. Piao2, S. F. LeBoeuf2, J. Y. Lin3, and H. X. Jiang3 1 Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV, 26506 2 GE Global research Center, Niskayuna, NY, 12309 3 Department of Physics, Kansas State University, Manhattan, KS, 66506 ABSTRACT The surface properties of n-type AlxGa1-xN (x=0-0.5) exposed to inductively couple plasma were studied systematically using metal contact measurements and X-ray photoelectron spectroscopy (XPS). Cl2/BCl3 and Ar plasma treatment considerably increased the surface conductivity of AlxGa1-xN (x

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