Investigation of the interface reactions of Ti thin films with AlN substrate
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Investigation of the interface reactions of Ti thin films with AlN substrate Xiangjun Hea) and Si-Ze Yang Group 101, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People’s Republic of China
Kun Tao and Yudian Fan Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People’s Republic of China (Received 26 June 1995; accepted 23 September 1996)
Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metalyAlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the TiyAlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 ±C to 800 ±C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4 N32x as well as Ti2 N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the TiyAlNySi sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.
I. INTRODUCTION
The metallization behavior of aluminum nitride (AlN), as a new substrate material with superior thermal conductivity, is of great importance in packaging applications. The thin film metallization of AlN substrate can achieve a higher wiring density and a larger number of input/output terminations for a package than conventional metallization (thick film metallization).1 Titanium, as an active element, can be used as the first metal layer on the substrate, acting as an adhesion layer to perform high adhesion strength to the substrate by interfacial reactions.2 The reactions occurring at the TiyAlN interfaces often determine the performance and reliability of packaging, because interfacial reactions determine the interfacial structure, which is related closely to the bond strength of the interface. The chemical bonding (atomic interaction) across the metal filmyAlN interfaces is also interesting from a scientific point of view. However, specific studies of interfacial reactions between the AlN substrate and Ti thin films at various a)
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Dr. Xiangjun He, E-mail:
J. Mater. Res., Vol. 12, No. 3, Mar 1997
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temperatures are very few in spite of its importance. There are
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