Investigation on electronic structure and magnetic properties of Co and Mn incorporated nanoscale SnO 2
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Investigation on electronic structure and magnetic properties of Co and Mn incorporated nanoscale SnO2 Dhamodaran Manikandan1 · Ivan S. Zhidkov2 · Andrey I. Kukharenko2 · Seif O. Cholakh2 · Ernst Z. Kurmaev2,3 · Ramaswamy Murugan1 Received: 14 April 2020 / Accepted: 13 June 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract The effect of Co and Mn co-doping and annealing on electronic structure and magnetic properties of nanoscale SnO2 were investigated using complementary experimental techniques. The high resolution transmission electron microscope (HRTEM) image showed spherical-like morphology and signalled the nanoscale regime of investigated samples. The results of X-ray photoelectron spectroscopy (XPS) analysis indicated the oxidation state of Co and Mn mostly as 2+. Moreover, XPS and Raman analysis corroborated the formation of oxygen vacancies as result of substitution tetravalent Sn with divalent Co and Mn. The XPS valence band spectra unveiled the formation of occupied states above the top of the valence band in as-synthesized Co and Mn co-doped SnO2 samples. Magnetic measurements disclosed the paramagnetic nature for the as-synthesized Co and Mn co-doped SnO2 samples and also demonstrated the dominating antiferromagnetic exchange interactions between the magnetic moments of Co and Mn. Interestingly, the annealed samples (Sn0.96Co0.02Mn0.02O2, Sn0.94Co0.02Mn0.04O2 and Sn0.94Co0.04Mn0.02O2) exhibited weak room temperature ferromagnetism (RTFM). The observed RTFM was explained based on the bound magnetic polaron (BMP) model. The comprehensive experimental investigations provide an interesting insight into the magnetic behaviour within the co-doped system. Keywords Doping · Transition metal · Oxygen vacancies · Nanoscale SnO2 · Ferromagnetism
1 Introduction Diluted magnetic semiconductors (DMS) have drawn much interest recently for their potential applications in spintronics and magneto-optical devices [1]. The significant aspect of DMS is doping a small fraction of transition metal (TM) Electronic supplementary material The online version of this article (https://doi.org/10.1007/s00339-020-03726-9) contains supplementary material, which is available to authorized users. * Dhamodaran Manikandan [email protected] * Ramaswamy Murugan [email protected] 1
Department of Physics, Pondicherry University, Puducherry 605014, India
2
Institute of Physics and Technology, Ural Federal University, 19 Mira Str., 620002 Yekaterinburg, Russia
3
M.N. Mikheev Institute of Metal Physics, Ural Branch of Russian Academy of Sciences, 18 Kovalevskaya Str., 620108 Yekaterinburg, Russia
into non-magnetic semiconductors to develop ferromagnetic polarized carriers at above room temperature for their practical device applications [2]. Among the DMS systems, wide band gap oxides doped with TM was found to exhibit ferromagnetic order at high Curie temperature with tunable semiconducting properties due to substantial sp-d exchange interaction among the magnetic
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