Ion Mixing in Film-Substrate Systems Under Polyenergetic Ar + Ion Beam Irradiation
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B.A. Kalin, N.V. Volkov, B.P. Gladkov, S.E.Sabo, I.H. Atalikova, A.A. Altuhov Moscow State Engineering Physics Institute (Technical University): Kashirskoe sh. 31, 115409, Moscow, Russia ABSTRACT
The results of alloying Al, Fe, and Mo surfaces by Be, Al, Ni, Sn under polyenergetic Ar+ ion beam irradiation with a mean energy of 10 keV have been presented. It has been shown that along with film and substrate materials sputtering there takes place the penetration of film atoms into substrate materials at a depth which is significantly greater (by a factor of 3... 10) than the projective range of ions in the given materials. The analysis of possible alloying depths with regard to different models (pure radiation range for monoenergetic ion beams; when the decrease of concentration is approximated by the exponential dependence; when the internal forcing out stresses are taken into account) for equal irradiation dose shows that the model, in which the migration of implanted atoms in the fields of forcing out stresses are considered, gives most close agreement between the calculated data and experimental ones. INTRODUCTION The penetration of film atoms into substrate materials under ion implantation plays a great role in the modification of material properties, in the production and operation of thin film systems. In this connection it is interesting to investigate the features of film atom penetration into substrate materials under simultaneous irradiation by ions of different energies. The results of alloying substrate materials from thermo-evaporated films under polyenergetic Ar+ ions beam irradiation, presented in the article [1], show that there is a linear dependence between the penetration depth and irradiation dose (D=1x10 17 ...5x10 1 8 ion/cm2). For the investigation of the features of implanted atom penetration into substrate materials, Al, Fe, Mo, as substrate materials with thermo-evaporated films of Be, Al, Ni, Cu, Mo, Sn on their surface, were irradiated by polyenergetic 17 to Ar+ ion beams with a mean energy of 10 keV in the dose range from 7x10 2 17 15x10 ion/cm determined by the condition of fulll sputtering of the film materials on the surface of substrates [1,2].
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Mat. Res. Soc. Symp. Proc. Vol. 396 0 1996 Materials Research Society
EXPERIMENTAL CONDITIONS AND MATERIALS Al, Fe, and Mo with an atomic mass being respectively less than, close to, and significantly greater than the atomic mass of an Ar+ ion have been chosen as substrate materials. These materials were exposed to standard treatment [1]. Films of the following materials, such as Be, Al, Ni, and Sn were deposited on the treated substrates by thermal evaporation in vacuum. The choice of film materials was dictated by taking into account the ion-filmsubstrate atomic mass ratio and film-substrate atomic radius ratio (ca = rf/rs). The atomic radius ratio of the substrate and film materials are 0.791; 0.867; 1.105 for Be; Ni; Sn inAl, 1.135; 0.984;1.254 and 1.021;0.866;1.129 for Al; Ni; Sn in Fe and Mo respectively. For the implantation of
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