Joe Greene Selected for 1999 David Turnbull Lectureship for Contributions to the Science of Thin Films
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Joe Greene Selected for 1999 David Turnbull Lectureship for Contributions to the Science of Thin Films As an educator who has been named "outstanding teacher" every semester he has taught at the University of Illinois and as a pioneering contributor to research in the areas of the growth mechanisms of thin films and multilayers, the development of hard coatings, the use of energetic ions in controlling crystal growth, and in the development and understanding of metastable semiconductor thin film alloys, Joe Greene has been selected to deliver the 1999 Materials Research Society's David Turnbull Lecture. He is cited for "contributions to the use of nonthermal methods in the growth of thin films and the engineering of their phase, composition, and microstructure; and for excellence in teaching and writing." The David Turnbull Lectureship recognizes the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by David Turnbull. Through his work in the areas of thin film science and surface engineering, Greene has focused on the controlled manipulation of the microchemistry, the microstructure, and thereby the physical properties of a wide array of systems. With his work on the use of energetic ion and photon beams, he has created new materials and improved existing ones in the development of wear coatings. Greene has also developed a new class of metastable semiconducting (III-V)1.X(IV2)J alloys that include (GaAs)i_x(Si2)ยป referred to as Greene alloys. In his seminal contributions to the development of Si atomic-layer epitaxy (ALE), Greene used techniques such as scanning tunneling microscopy (STM), synchrotron radiation photoemission, and electron energy loss spectroscopy (EELS) to probe atomic-scale changes in the local chemistry and structure as layers were formed atom-by-atom. He developed the basic surface science of Si ALE, followed by applications to real-world growth and device manufacturing which has since been implemented by electronic companies in the United States and Japan. His work on low-energy, accelerated-ion doping during molecular beam epitaxy of Si and Sij.jGe.,. film growth has led to the modification of film properties for electronic and optical devices. In collaborative work with colleagues at Linkoping University in Sweden, Greene
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Joe Greene revolutionized the hard-coating industry through studies on Tij.xAlxN and related alloys. Greene and his research group did pioneering work on surface morphological evolution of hard coatings and were the first to use in situ atomic-resolution hightemperature STM to follow the dynamics of island formation and decay during the growth of TiN by ultrahigh vacuum reactive magnetron sputter deposition. Greene has been awarded many honors during his research career, including the Tage Erlander Professorship of Physics at Linkoping University awarded every three years by the Swedish Natural Science Research Council, and the Doctor of Science Degre
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