Kinetics of borosilicate glass deposition
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Harry Meyer and Criag Blue Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (Received 10 October 2003; accepted 3 December 2003)
The kinetics of borosilicate glass film deposition on silicon using boron nitride as a solid source was investigated. Experimental data on the thickness of deposited films as a function of temperature and process times under controlled atmospheric conditions was obtained. A 33-kW rapid thermal processing infrared furnace was used to minimize temperature and gas phase transients experienced on the commercial scale. The thickness and composition of the borosilicate glass films were measured using scanning Auger spectroscopy, and the thickness of the films as a function of time for various temperatures are presented. The results suggest a rapid transition to diffusion-controlled deposition with an activation energy of 2.77 ± 0.5 eV. The partial pressure of water vapor was found to have a potentially significant effect on the rate of film growth.
I. INTRODUCTION
The miniaturization of electronic components provided the stimulus for explosive growth of the semiconductor industry. This growth is fueled by a continuing trend for improving performance requirements of electronic systems.1 At the heart of this industry lie the processes used to alter the electrical characteristics of silicon through introduction of controlled amounts of impurities (e.g., doping). Among these processes are ion implantation and various gas phase methods including planar diffusion using boron nitride (BN) as a solid boron (B) source. The ultimate aim of silicon-doping technologies is to cost-effectively produce integrated circuits with controlled characteristics. The challenge lies in containing fabrication costs and minimizing variability and reject rates. These goals have put pressure on various doping technologies during the past decade, driving the silicon industry to produce and process larger and larger wafers with targets as high as 30.5 cm (12 in.) in diameter. Although the solid-source doping technology has been practiced for three decades and has largely been replaced by ion implantation for most applications, it remains the workhorse for deep junction, high concentration power circuit applications. Market estimates place solid source as being used to dope as much as 9% of processed wafers and up to 15% of devices produced.2 Yet, a number of technical developmental issues remain a)
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J. Mater. Res., Vol. 19, No. 3, Mar 2004 Downloaded: 08 Jul 2014
to be addressed, and a number of basic queries remain unanswered, one of them being the kinetics of borosilicate glass deposition using boron nitride as a solid boron source. Making significant strides toward sustained development of this technology lies in our ability to capture the physics and chemistry in accurate mathematical descriptions that permit us to perform cost-effective computational process optimization. The objective of this resea
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