Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration
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Laser irradiation inuence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration J.F. Michaud, R. Khazaka, M. Portail, G. Andrä, J. Bergmann and D. Alquier MRS Advances / FirstView Article / July 2016, pp 1 - 6 DOI: 10.1557/adv.2016.327, Published online: 10 May 2016
Link to this article: http://journals.cambridge.org/abstract_S2059852116003273 How to cite this article: J.F. Michaud, R. Khazaka, M. Portail, G. Andrä, J. Bergmann and D. Alquier Laser irradiation inuence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration. MRS Advances, Available on CJO 2016 doi:10.1557/ adv.2016.327 Request Permissions : Click here
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.327
Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration J.F. Michaud1, R. Khazaka1,2, M. Portail2, G. Andrä3, J. Bergmann3 and D. Alquier1 1
Université François Rabelais, Tours, GREMAN, CNRS-UMR 7347, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France 2 CRHEA, CNRS-UPR10, rue Bernard Gregory, 06560 Valbonne, France 3 Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena, Germany ABSTRACT The cubic polytype of silicon carbide is a stimulating candidate for Micro-ElectroMechanical-Systems (MEMS) applications due to its interesting physical and chemical properties. Recently, we demonstrated the possibility to elaborate 3C-SiC membranes on 3C-SiC pseudo-substrates, using a silicon epilayer grown by Low Pressure Chemical Vapor Deposition as a sacrificial layer. Such structures could be the starting point for the elaboration of new MEMS devices. However, the roughness still represents a major concern. Therefore, in this contribution, we investigate the influence of an excimer laser irradiation on the Si epilayer surface prior to the 3C-SiC epilayer growth. We compare these results with the 3C-SiC epilayer grown directly on the as-grown Si epilayer. INTRODUCTION Since last decades, silicon carbide (SiC) is the subject of intensive research and development activities due to its electrical, physical and chemical properties. Thanks to its electrical properties, SiC is considered as the material of choice for high power and high temperature electronic devices while mechanical properties make it very attractive for MicroElectro-Mechanical-Systems (MEMS) applications [1-3]. Moreover, its physical and chemical parameters render it suitable to operate in harsh conditions [4-5]. SiC exists in more than 250 different crystalline structures called polytypes [6]. But only two hexagonal structures (4H, 6H) and its cubic form (3C-SiC) are commercially available. Compared to the other structures, 3C-SiC is the only one that can be hetero-epitaxially grown on low cost and large diameter silicon substrates. A
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