Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment
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Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment Abdurauf A. Dzhurakhalov, Sirojiddin E. Rahmatov, Nigorakhon Teshabaeva, Maqsud Yusupov Arifov Institute of Electronics, Theoretical Dept. F.Khodjaev Street, 33 700125 Tashkent, Uzbekistan ABSTRACT The ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented. INTRODUCTION For nanotechnology, nanoscale analysis and modification the application of grazing angles of incidence of ions on the solid surface is of high importance. At grazing incidence the ion implantation and sputtering lead to change of a profile of composition and structure of thin layers on the surface. That is why at present most of papers is devoted to the study of application of grazing ion bombardment [1]. In [2] ion sputtering at grazing incidence was used for growth of periodic and remarkably well-ordered rippled structures with ridges oriented along the and < 1 1 0 > azimuthal directions of Ag(110) surface. In [3,4] it has been suggested that atomically clean, flat,crystalline Si surfaces can be obtained by low-energy ~0.1–1 keV grazing-angle (>45° off-normal) argonion bombardment. The surface morphology of Pt(111) and the step edge sputtering yield were investigated in [5] after 5 keV Ar ion bombardment at grazing incidence in dependence of the ion fluence in the temperature range between 625 and 720 K. In this work the average erosion rate was found to be strongly dependent on the ion fluence and the substrate temperature during bombardment. Molecular dynamics simulations have been used also for studying ballistic effects during scattering under glancing angles of incidence from crystal surfaces [6] and to obtain the three-dimensional distribution of interfacial mixing and cascade defects in Ti/Pt multilayer system due to single 1 keV Ar+ impact at grazing angle of incidence [7]. In [8] a cleaning method consisting of grazing bombardment with 20 keV Ar+ combined with annealing at 500 °C was used for a clear improvement of the surface flatness which allowed the study the topography and the atomic structure of a clean GaAs(110) surface by time-of-flight ion scattering spectrometry. In the present work the ion sputtering and implantation processes at low-energy grazing ion bombardment of GaAs(001) surface have been investigated by computer simulation. COMPUTER SIMULATION TECHNIQUES The present computer code for a calculation of the ion trajectories is based on the binary collision approximation. For the description of the particle interactions the Biersack-ZieglerLittmark potential [9] was used. The inelastic energy losses were regarded as local de
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