Level spectrum of a single gated arsenic donor in a three terminal geometry
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1117-J01-03
Level spectrum of a single gated arsenic donor in a three terminal geometry G.P. Lansbergen1, R. Rahman2, C.J. Wellard3, J. Caro1, I. Woo2, N. Colleart4, S. Biesemans4, G. Klimeck2,5, L.C.L. Hollenberg3, S. Rogge 1 1
Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands 2 Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, USA 3 The Center for Quantum Computer Technology, School of Physics, University of Melbourne, VIC 3010, Australia 4 InterUniversity Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium 5 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA ABSTRACT State of the art CMOS devices have been scaled to such dimensions that we need take atomistic approach to understand their operation for nano-electronics. From a bottoms-up perspective, the smallest functional element within a nano-device would be a single (dopant) atom itself. Control and understanding of the eigenenergies and wavefunctions of a single dopant in Si is a key ingredient for device technology beyond-CMOS like quantum-information processing. Here, we will discuss the eigenlevels of a single As donor in a three terminal configuration. The donor is incorporated in the channel of prototype transistors called FinFETs. The measured eigenlevels are shown to consist of levels associated with the donors Coulomb potential, levels associated with a triangular well at the gate interface and hybridized combinations of the two. The theoretical framework in which we describe this system (NEMO3D) is based on a tight-binding approximation. INTRODUCTION The material problems around isolated donors in silicon are of key interest due to their potential use in quantum electronics [1-6]. The donors form 3D Coulomb (thus truly atomistic) potentials in the silicon lattice that can bind up to two electrons [7]. In the majority of proposals for silicon quantum electronics, isolated donors act as the binding sites for the informationcarrying electrons. The ability to perform (quantum) operations is crucially provided by one (or more) gate electrodes around the donor site. Although many proposals are based on the functionality of isolated single donors, experimental access to such systems is difficult (but has been successfully achieved in a few occasions [8-10].) Here, we will discuss resonant tunneling spectroscopy measurements on the eigenlevels of single As donors in a three terminal configuration, i.e. a gated donor which is a basic element for quantum electronics. The donors are incorporated in the channel of (p-type) prototype transistors called FinFETs. The local electric field due to the built-in voltage between the channel and the gate electrode forms a triangular potential at the interface. We will show that by means of spectroscopic measurements we can identify states to be associated with either the donors Coulomb potential, the triangular well or a hybridized combinations of the two. The t
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