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Interlayer Dielectrics for Semiconductor Technologies Shyam P. Muraka, Moshe Eizenberg, and Ashok K. Sinha, Editors (Elsevier Academic Press, 2003) 480 pages; $185.00 ISBN 0-12-511221-1 Moore’s law predicts that the number of transistors in a semiconductor device will double every 18 months. As those in the semiconductor field may attest, it seems as though the amount of information generated to engineer these devices follows the same trend. The aim of this text is to give the reader an understanding of the issues involved with interlayer dielectrics as applied to silicon-based semiconductor devices, and to give readers an information base that will allow them to stay knowledgeable about the latest developments. The book is a compilation of works assembled from a mix of both academic and industrial authors that gives the reader a broad feel for all aspects of interlayer dielectric science and integration. Due to the generalized nature of the book, it is most applicable for those first studying interlayer dielectrics. This text explains some of the basic science behind using different materials in device manufacturing and introduces some of the issues associated with their integration. Both silicon-based and polymeric low-κ dielectrics are treated. The editors seem to understand the trends for expanding information, and have thus chosen to give an overview of the basics in order to extend the useful lifetime of the book. Published in 2003, some of the information is dated, and some newer technologies are not introduced. The reader interested in industrial integration of interlayer dielectrics will generally be pleased with the treatments in this text. The reader interested in fundamental materials science aspects of interlayer dielectrics may be disappointed, with a couple of notable exceptions. Of note to materials scientists are three chapters dedicated to processing low-κ dielectrics, one chapter to low-κ characterization, and one chapter to nanoporous dielectrics in general. The latter is of special note, due to the authors’ careful treatment of pore structure–materials property relationships. Chapter 1 of the text defines interlayer dielectrics as those used during device processing, such as etch stops and antireflection coatings; those insulating between metal lines or adjacent transistors, such as low-κ dielectrics; and those that are active during the device operation, such as gate oxides. The reader should note, however, that the majority of this text deals mainly with low-κ materials, MRS BULLETIN • VOLUME 30 • AUGUST 2005

with the exception of a single chapter addressing high-κ gate oxides and a single chapter dealing with optical waveguides. While technically interesting and summarized as well as could be expected in a single chapter, these subjects are deserving of their own texts. In summary, this text is highly recommended for the industrial semiconductor engineer beginning work with low-κ dielectrics or wanting a basic introduction to many aspects of interlayer dielectrics. This text will c

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