Light Trapping in Thin Film Silicon n-i-p Solar Cells - Gains and Losses
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Light Trapping in Thin Film Silicon n-i-p Solar Cells - Gains and Losses Ruud E.I. Schropp, Hongbo Li, Jatin K. Rath, and Ronald H. Franken Faculty of Science, Debye Institute of Nanomaterials Science, Nanophotonics - Physics of Devices, Utrecht University, P.O. Box 80.000, Utrecht, 3508 TA, Netherlands ABSTRACT Thin film silicon solar cell technology frequently makes use of rough or textured surfaces in order to enhance light absorption within the thin absorber layers by scattering and total internal reflection (“light trapping”). The rough morphology of the optically functional internal surfaces both in superstrate and substrate cells however, not only has a beneficial effect on light scattering properties, but on the other hand may also have deleterious effects on the microscopic structure of the deposited layers, in particular if these layers are nanocrystalline. The narrow valleys in the surface morphology may lead to structural defects, such as cavities and pinholes. By adjusting the morphology, these defects can be avoided. However, even when structural defects in layers directly deposited on rough interfaces are avoided, the obtained optically defined maximum current density is still much lower than expected. For instance, in n-i-p structures the rough interface (the textured back reflector consisting of nanostructured Ag coated with ZnO) is located at the back of the cell, where only long wavelength light is present. The natively textured Ag film is sputtered at elevated temperature and optimized for diffusely reflecting this long wavelength light. From experiments we infer that the nanostructured metallic surface also gives rise to plasmon absorption in the red and near IR, and that this leads to a parasitic absorption, i.e. at least part of the absorbed energy is not re-emitted to the active layers.
INTRODUCTION Recently we have developed proto-Si/proto-SiGe/nc-Si:H triple junction n-i-p solar cells in which the top and bottom cell i-layers are deposited by Hot-Wire CVD. Firstly, a significant current enhancement is obtained by using textured Ag/ZnO back contacts developed in house instead of plain stainless steel. We studied the correlation between the integrated current density in the long wavelength range (650-1000 nm) with the back reflector surface roughness and clarified that the rms roughness from 2D AFM images correlates well with the long wavelength response of the cell when weighted with a Power Spectral Density function. For single junction 2-μm thick nc-Si:H n-i-p cells we improved the short circuit current density from the value of 15.2 mA/cm2 for plain stainless steel to 23.4 mA/cm2 for stainless steel coated with a textured Ag/ZnO back reflector. Secondly, we optimized the nc-Si:H n-type doped layer on this rough back reflector, the n/i interface, and in addition we used a profiling scheme for the H2/SiH4 ratio during i-layer deposition. The H2 dilution during growth was stepwise increased in order to prevent a transition to amorphous growth. The efficiency that was reached f
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