Long Wavelength Characterization of Internal Quantum Efficiency in LT-GaAs MSM Photodiodes
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LONG WAVELENGTH CHARACTERIZATION OF INTERNAL QUANTUM EFFICIENCY IN LT-GaAs MSM PHOTODIODES JEFFREY D. MORSE AND RAYMOND P. MARIELLA, JR. Lawrence Livermore National Laboratory, P.O. Box 808, L-156, Livermore, CA 94550
ABSTRACT Metal-Semiconductor-Metal (MSM) photodiodes fabricated from low temperature (LT) grown GaAs by molecular beam epitaxy have been characterized for wavelengths extending out to 1.5g.tm. External quantum efficiencies on the order of 0.5 % have been measured for subbandgap wavelengths, which translates to internal quantum efficiencies of 2-4 % for the interdigitated electrode structure with lpgm finger spacing and width. Although the effective lifetime of the LT-GaAs has been determined to be
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