Low Temperature CVD of Ru from C 6 H 8 Ru(CO) 3
- PDF / 259,142 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 1 Downloads / 185 Views
0990-B09-06
Low Temperature CVD of Ru from C6H8Ru(CO) 3 Teresa S Lazarz1, Yu Yang1, Navneet Kumar1, Do Young Kim2, Wontae Noh2, Gregory S Girolami2, and John R Abelson1 1 Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801 2 Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, IL, 61801 ABSTRACT Thin ruthenium films were deposited using chemical vapor deposition from the single-source precursor tricarbonyl(1,3-cyclohexadiene)Ru(0) onto silicon, silicon dioxide and c-plane sapphire substrates in the absence of a carrier gas by thermolysis. Growth rate, resistivity, purity, crystallinity and microstructure were determined. Tricarbonyl(1,3-cyclohexadiene)Ru(0) gave metallic ruthenium films with near bulk resistivities (11-21μΩ-cm), high growth rates (up to 20 nm/min), and nearly featureless microstructures. Nucleation was rapid on all substrates tested. These results suggest that tricarbonyl(1,3-cyclohexadiene)Ru(0) is an excellent, practical precursor to use for practical applications that require depositing thin ruthenium films. INTRODUCTION Thin ruthenium films have multiple uses in microelectronic components, including dynamic random access memories (DRAMs)[1] , ferroelectric random access memories (FRAMs)[2] , pdoped metal-oxide-semiconductor field effect transistors (pMOSFETs)[3] , and in the copper dual damascene process[4]. Thin ruthenium films have been deposited using chemical vapor deposition (CVD) from many precursors already, but even the most successful precursors struggle with low growth rates or do not report growth rates.[5,6] One notable exception to generally low growth rates is cyclopentadienyl-propylcyclopentadienylruthenium(II) (RuCp(iPrCp)), which has given growth rates between 7.5 and 20 nm/min.[7] However, RuCp(i-PrCp) suffers from nucleation problems on covalent substrates.[8] Here, we report results from using tricarbonyl(1,3-cyclohexadiene)Ru(0) (C6H8)Ru(CO)3) as a CVD precursor. (C6H8)Ru(CO)3 gives ruthenium films with near bulk resistivities, high growth rates, and good nucleation on covalent substrates. EXPERIMENT Synthesis of tricarbonyl(1,3-cyclohexadiene)Ru(0) Tricarbonyl(1,3-cyclohexadiene)Ru(0) was synthesized using the procedure in U. S. Patents 6114557 and 6420583.[9] The commercially available starting materials dodecacarbonyltriruthenium and 1,3-cyclohexadiene were refluxed in toluene overnight in a Schlenk tube to yield tricarbonyl(1,3-cyclohexadiene)Ru(0) in toluene. Upon evaporation of the toluene, tricarbonyl(1,3-cyclohexadiene)Ru(0) was obtained as a pale yellow liquid. Purity of the
product was confirmed by Fourier transform infrared spectroscopy (FTIR) and nuclear magnetic resonance (NMR). Only tricarbonyl(1,3-cyclohexadiene)Ru(0) was detected. The same procedure was reported to have given kilograms of product in good yield.[9] Chemical vapor deposition and characterization of ruthenium films Films were grown in a previously described turbopumped system of ultrahigh vacuum construction.[10] (C6H8)Ru(CO
Data Loading...
