Low Temperature Growth of Silicon Dioxide Thin Films by UV Photo-oxidation

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Low Temperature Growth of Silicon Dioxide Thin Films by UV Photo-oxidation Atsuyuki FUKANO and Hiroyuki OYANAGI Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan Abstract The low-temperature growth of thin SiO2 layers for gate insulators in very large-scale integrated (VLSI) circuits is becoming an urgent topic of silicon technology. In contrast, to conventional thermal oxidization processes (T>900°C), ultraviolet (UV) photooxidation of silicon technology is a promising approach for low-temperature growth of silicon dioxide thin films. We have grown silicon dioxide thin films at low temperature (T

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