Low-temperature synthesis of Zn 3 P 2 nanowire
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w-temperature synthesis of Zn3P2 nanowire In-Tae Baea) Small Scale Systems Integration and Packaging Center, State University of New York at Binghamton, Binghamton, New York 13902
Parag Vasekar, Daniel VanHart, and Tara Dhakal Center for Autonomous Solar Power, State University of New York at Binghamton, Binghamton, New York 13902 (Received 13 April 2011; accepted 17 May 2011)
High-quality Zn3P2 nanowires are synthesized at a temperature as low as 350 °C using Zn foil and trioctylphosphine by chemical reflux method. Scanning electron microscopy and transmission electron microscopy (TEM) images show their diameters vary from ;15 to 70 nm. Energy dispersive x-ray spectroscopy and nanobeam electron diffraction patterns in combination with structure factor simulation reveal that the nanowires have tetragonal a-Zn3P2 structure. Based on high-resolution TEM images and their fast Fourier transform patterns, Zn3P2 nanowires are considered to grow on a vicinity of the possibly highest surface energy plane of (101) with a growth direction parallel to [101]. Zn3P2 is an important II–V group semiconductor for optoelectronic applications since it has a direct bandgap in the range of 1.4–1.6 eV that corresponds to the optimum range for solar energy conversion.1–3 Its large optical absorption coefficient of .104 cm1 and long minority diffusion length of ;13 lm allow high current collection efficiency.4 Furthermore, both of its constituent atoms are abundant, which leads to increased feasibility of large scale development of devices, such as solar cells, infrared, and/or ultraviolet sensors.5,6 In addition, Zn3P2 is also considered as one of the most promising negative electrode materials for Li-ion battery application due to its low polarization and decent reaction potential with Li during initial and successive cycles.7,8 Syntheses of one-dimensional (1D) nanostructures, such as tubes, wires, belts, and ribbons, have drawn considerable attention because of potential applications in nanosize devices with various functionalities due to their unique physical and chemical properties. A number of studies have reported synthesis of 1D Zn3P2 nanostructures using various synthesis methods including thermochemical processes,9–11 thermal-assisted pulsed laser ablation,2 and chemical vapor deposition.12,13 From the perspectives of technology, however, the synthesis temperatures in those reports are rather high ranging from 850 to 1400 °C.2,4–6,9–14 In this letter, we report low-temperature synthesis of Zn3P2 nanowires using a chemical reflux method. The details of Zn3P2 nanowires synthesis are as follows: 5 mL of trioctylphosphine (TOP) is supplied to a glass vessel in which a Zn foil that was precleaned with a)
Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/jmr.2011.180 1464
J. Mater. Res., Vol. 26, No. 12, Jun 28, 2011
http://journals.cambridge.org
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a solution of nitric acid (5 mL), sulfuric acid (5 mL), and distilled water (50 mL) is placed on the top of a fritted glass. Whe
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