Magnetic and Magnetotransport Properties of Memory Sensors Based on Anisotropic Magnetoresistance
- PDF / 1,685,619 Bytes
- 6 Pages / 595.276 x 790.866 pts Page_size
- 96 Downloads / 159 Views
ORIGINAL PAPER
Magnetic and Magnetotransport Properties of Memory Sensors Based on Anisotropic Magnetoresistance E. Demirci 1 Received: 14 July 2020 / Accepted: 10 August 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract The magnetic and magnetoresistance properties of anisotropic magnetoresistance (AMR) sensors based on Wheatstone bridge (WB) with barber pole and conventional Hall bar structures were studied. The samples were prepared by using standard microlithography and sputter deposition techniques and then measured by magneto-optic Kerr effect and magneto transport methods. The advantages of the AMR sensor based on WB compared with Hall bar structure were discussed. It was observed that sensitivity was increased almost 15 times when sensors with the WB structures were used instead of Hall bar structures. Moreover, sensor stability was tested in various external magnetic fields with positive and negative polarities. The test results show that sensor response is stable even in various external magnetic fields up to 5000 Oe. The changes in sensitivity and output voltage were attributed to WB structure. Keywords Anisotropic magnetoresistance (AMR) . Wheatstone bridge . barber pole . electrical output voltage . sensor sensitivity
1 Introduction In recent years, several types of magnetic sensors were used in practical applications such as giant magnetoresistance [1, 2], giant magnetoimpedance [3, 4], tunneling magnetoresistance/ spin-dependent tunneling [5], and Hall effect [6]. Although they have a wide range of practical applications, many of these sensors generally work at relatively high magnetic fields and offer increased volume and power consumption. To overcome these critical disadvantages, the sensors based on anisotropic magnetoresistance (AMR) are mostly preferred due to their high sensitivity, the flexibility of the design, and compatibility with standard microelectronics technology. But the AMR sensors need to combine logic and memory on a single integrated circuit, and this case would require high sensitivity. The barber pole structures are a perfect design for such an application. The barber pole structures are highly sensitive at weak magnetic fields, and the energy consumption of these structures is very low for magnetic field sensors [7–10]. Another substantial advantage of the AMR sensors with barber pole structure * E. Demirci [email protected] 1
Department of Physics, Gebze Technical University, 41400 Kocaeli, Turkey
is that they give rise to linear electrical output voltage under the various external magnetic field (Hext). Undoubtedly, this situation will significantly increase the interest in AMR sensors with barber pole structure due to their practical applications in navigation applications [11], flexible spintronic devices [12, 13], and space science [14]. It is known that the AMR effect arises from the anisotropic scattering of conductive electrons with uncompensated spins, and it strongly depends on the angle (θ) between the magnetization (M) and t
Data Loading...
