Magnetron Sputtered Perpendicular Barium Hexaferrite Thin Films Produced by the Multilayered Method
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ORIGINAL PAPER
Magnetron Sputtered Perpendicular Barium Hexaferrite Thin Films Produced by the Multilayered Method Alaaedeen R. Abuzir 1
&
Saed A. Salman 1 & Javed Mazher 1
Received: 2 June 2020 / Accepted: 11 August 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract We report on the synthesis and characterization of thin M-type barium hexaferrite (BaFe12O19 or BaM) films on sapphire (0001) substrates by RF magnetron sputtering. Single layers of 150 nm, 200 nm (S200), 400 nm (S400), 600 nm, and 700 nm were fabricated. Multilayered technique with inner-layer annealing was employed to fabricate the 400 nm (M400) BaM films. The thickness dependence of the magnetic, structural, elemental analysis, and surface morphological properties of the BaM films has been investigated using VSM, XRD, EDX, and SEM, respectively. For the M400 BaM films, excellent magnetic properties with high values of out-of-plane coercivity (Hc┴ = 3.1 KOe) and squareness (S┴ = 0.9) were obtained. The surface morphology of the M400 shows a platelet-like grains, which have their c-axis orientation in the out-of-plane direction. The magnetic properties and XRD data of the S200 films and M400 were about the same. For the single S400, S600, and S700 films, the magnetic properties have been reduced due to the excess oxygen concentration and the exchange interactions, the stress relaxation of the lattice constant, and the formation of the acicular grains. The acicular grains of the S400 films favor their c-axis aligned in the in-plane direction. Keywords Barium Hexaferrite . Magnetic properties . Hysteresis loop . VSM . C-axis
1 Introduction Extensive research work on complex metal oxides utilizing iron ions has focused on spinels, ferrites, and hexagonal ferrites. M-type barium hexaferrite (BaFe12O19 or BaM) has a hexagonal crystal structure, and the ferrimagnetic magnetoplumbite hexaferrite has the general formula PO· 6(Fe2O3), in which PO may be replaced by Ba2+, Sr2+, or Pb2+. BaM is of considerable practical importance because it exhibits high resistivity, has a high internal uniaxial anisotropy field, and has high saturation magnetization. The crystal exhibits its high magnetic anisotropy along only one axis of easy magnetization, resulting in the large coercive force. These properties of BaM enable them to be important material in the microwave and the high-density magnetic media recording applications [1, 2].
* Alaaedeen R. Abuzir [email protected] 1
Department of Physics, College of Science, King Faisal University, Al Ahsa 31982, Kingdom of Saudi Arabia
To be employed in the ultra-high-density magnetic recording applications, thin magnetic films have to possess certain characteristics such as higher signal-to-noise (S/N) ratio, high perpendicular coercivity Hc, and large perpendicular squareness (S┴ = Mr/Ms) [3, 4]. BaM thin films have been used in the ultra-highdensity magnetic recording applications, due to their high uniaxial anisotropy, high mechanical hardness, and good chemical stability. Mainly, th
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