Materials Issues in the Development of High Data-Transfer-Rate Phase-Change Compounds
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Materials Issues in the Development of High Data-Transfer-Rate Phase-Change Compounds Martijn H.R. Lankhorst and Herman J. Borg Philips Research Laboratories, Prof. Holstlaan 4, 5656AA, Eindhoven, The Netherlands, ([email protected]) ABSTRACT A model is presented to calculate glass-transition temperatures. This model in combination with experimental data is used to evaluate archival-life stability of common phase change materials Ge2Sb2Te5 and doped eutectic Sb2Te compositions. On the basis of this model, novel high-data-rate phase change compositions have been identified near and on the pseudo-binary line InSb-GaSb in the ternary system Ga-In-Sb. INTRODUCTION Phase-change optical recording has evolved to a mature technology that is applied in re-writable data-storage systems such as CD-RW, DVD+RW and DVD-RAM. In these systems, the recording of information is based on writing and erasing amorphous marks in a crystalline layer of a phase-change material. Besides sufficient optical contrast between the crystalline and amorphous state and a sufficiently low melting point attainable with moderate lasers powers, the crystallisation behaviour at various temperatures is one of the most important aspects in developing phase-change materials. At elevated temperatures the crystallisation time of amorphous marks should be short to enable high data-rate (
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