MBE Growth and Ultrahigh Temperature Processing of High-Quality AlN Films

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MBE growth and ultrahigh temperature processing of high-quality AlN films Z.Y. Fan, G. Rong, and N. Newman Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, U.S.A. David J. Smith, D. Chandrasekhar Department of Physics and Astronomy and Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1504, U.S.A. ABSTRACT Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150oC), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-films with narrow rocking curve widths (

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