Mechanical property and dislocation dynamics of GaAsP alloy semiconductor
- PDF / 472,067 Bytes
- 5 Pages / 593.28 x 841.68 pts Page_size
- 11 Downloads / 225 Views
Gunzo Izawa Department of Chemistry, Faculty of Science, Tohoku University, Sendai 980, Japan
Hisao Watanabe and Junji Matsui NEC Corporation, Fundamental Research Laboratories, Kawasaki 213, Japan (Received 11 August 1988; accepted 2 November 1988) The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors. I. INTRODUCTION Extensive studies have been conducted on the mechanical properties and dislocation dynamics in elemental and some of compound semiconductors. Results of such studies are now widely applied to the materials technology of electronics. Alloy semiconductors are the materials which can be used for optoelectronics devices, light-emitting diodes, and laser diodes, with a wide variety of wavelength of emitting light and lattice parameters. It is known that the activity of dislocations is closely related to the degradation of devices made by these materials.1 Nevertheless, because of the difficulty in the preparation of bulk single crystals, far less is known of the mechanical property and dynamic property of dislocations in alloy semiconductors in comparison with elemental and compound semiconductors. Few studies have so far been made of the hardness of alloy semiconductors grown by the liquid phase epitaxy technique. Vigdorovich etal.2 showed that InAsP alloy had the maximum hardness at the composition of 20% P. Watts et al.3 reported that the anisotropy of microhardness of InGaAsP alloy strongly depended on its composition and that the maximum hardness was attained at some moderate composition of the alloy. These results seem to mean that alloying results in the enhancement of the hardness of III-V compounds. It is necessary to establish knowledge of the dynamic behavior of dislocations in such alloy semiconductors because it may have direct applicability to the technology for suppressing degradation of optoelectronics devices, etc. It is also interesting from the fundamental point of view to know the details of the alloying effect on the dislocation behavior in compound semiconductors. This paper studies the mechanical property of GaAsP alloy semiconductor and deduces the dynamic characteristics of dislocations from the experimental results. The reJ. Mater. Res., Vol. 4, No. 2, Mar/Apr 1989
http://journals.cambridge.org
Downloaded: 14 Mar 2015
sults are compared with those in GaAs and GaP compound semiconductors .4>5 II. EXPERIMENTAL Specimens were prepared from a GaAsP crystal of ntype grown by the LEC technique,6 the carrier concentration of which was 7 x 1016 cm"3. The composition of the alloy was determined by P
Data Loading...
