Meso-photonic Detection with HgCdTe APDs at High Count Rates
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https://doi.org/10.1007/s11664-020-08461-8 2020 The Minerals, Metals & Materials Society
TOPICAL COLLECTION: U.S. WORKSHOP ON PHYSICS AND CHEMISTRY OF II-VI MATERIALS 2019
Meso-photonic Detection with HgCdTe APDs at High Count Rates JOHAN ROTHMAN ,1,2 SALVATORE PES,1 PIERRE BLEUET,1 JULIE ABERGEL,1 SYLVAIN GOUT,1 JEAN-ALAIN NICOLAS,1 JEAN-PIERRE ROSTAING,1 SEBASTIEN RENET,1 LYDIE MATHIEU,1 ˆ ME LE PERCHEC1 ´ RO and JE 1.—CEA/LETI-Minatec, 17, Rue des Martyrs, 38054 Grenoble Cedex 9, France. 2.—e-mail: [email protected]
The characterization results and analysis from the detection of meso-photonic laser pulses, characterized by zero to tens of photons per pulse, using an inhouse developed detector module based on HgCdTe avalanche photodiodes (APDs) are reported. In this detector module, HgCdTe APDs is hybridized to a specifically developed Si CMOS amplifier circuit with a low input noise and high bandwidth of 400 MHz that is shown to be capable of detecting single photon events at APD gain in excess of 100. The use of a Si CMOS amplifier with a high bandwidth is crucial to detect pulsed signals at high rates. With the present detector, this has enabled to detect temporally distinguishable single photon events up to a record rate of 500 MHz on a single solid-state detector. The capacity of the detector to characterize mesoscopic light states was demonstrated on an input state of an average of l= 1.6 photons using a fitting procedure to extract the timing and amplitude of each pulse. This analog approach to analyze the detection of meso-photonic light is shown to be efficient to estimate the attenuated photon state and to calibrate detector characteristics such as the event detection efficiency (87%), the multiplication gain distribution and corresponding excess noise factor (F = 1.33) and the timing jitter distribution with a full width half maximum of FWHM= 277 ps. Key words: HgCdTe APDs, meso-photonic, single photon detection, detection rate, count rate
INTRODUCTION The exclusive electron multiplication and corresponding high gain and low excess noise factor in HgCdTe APDs enables detection down to a single photon with a high quantum efficiency that is expected to exceed 90%.1 As the detection is done in linear mode, these detectors conserve a high dynamic range, enabling detection of multiple photon states on a single detector and do not exhibit a dead-time after the detection of one or a large
(Received February 6, 2020; accepted August 29, 2020; published online September 15, 2020)
number of photons. The photon number resolution (PNR) for the former is limited by the excess noise of the detector and real-time decision with low errors can only be obtained for low values of F < 1.1. Present HgCdTe APD detectors tend to exhibit F values in excess of 1.2 and are limited to a noise PNR in which the photon state can be estimated by amplitude distribution of the detected events. The former is much lower than in other APDs, and the observation of such low excess noise values has been attributed to dead-space e
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