Microstructural and Ferroelectric Properties of a Chemical Solution Deposited Epitaxial PbZr 0.5 Ti 0.5 O 3 Thin Film on
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Microstructural and ferroelectric properties of a chemical solution deposited epitaxial PbZr0.5 Ti0.5O3 thin film on a SrRuO3ySrTiO3 substrate J. H. Kim,a) A. T. Chien, and F. F. Lange Materials Department and Materials Research Laboratory, College of Engineering, University of California, Santa Barbara, California 93106
L. Wills Solid State Technology Laboratory, Solid State Materials Department, Hewlett-Packard Labs, 3500 Deer Creek Rd., 26M-7, Palo Alto, California 94304 (Received 4 August 1998; accepted 21 December 1998)
Epitaxial PbZr0.5 Ti0.5 O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 ±C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the AgyPZTySRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PZT k (001) [010]SRO k (001) [010]STO with the substrate. The remnant (Pr ) and saturation polarization (Ps ) density were measured to be Pr , 51.4 mCycm2 and Ps , 62.1 mCycm2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 3 108 cycles.
Ferroelectric PbZr12x Tix O3 (PZT) thin films are of great importance because of their potential optical and electronic applications, such as nonvolatile memories, pyrodetectors, surface acoustic wave, and waveguide devices. However, most PZT thin films are polycrystalline and grown on platinum-based electrodes with high-angle grain boundaries. Such films are prone to aging and fatigue. Furthermore, the polarizability of polycrystalline PZT thin films are lower than that of single-crystal PZT thin films. Considerable attention has, therefore, been recently paid to the preparation of epitaxial PZT thin films on a variety of epitaxial metallic oxide layers by a variety of deposition methods including PZT on La0.5 Sr0.5 CoO3 by sol-gel1 and pulsed laser deposition,2,3 and on YBa2 Cu3 Ox by pulsed laser deposition4–6 and rf-magnetron sputtering deposition.7 These epitaxial oxide electrode layers, which have excellent chemical and structural compatibility, should eliminate the fatigue problem associated with metallic electrodes. SrRuO3 (SRO) is a conductive (r , 300 mV cm), pseudocubic perovskite structure (a 0.393 nm), which has a modest lattice mismatch with PbZr0.52 Ti0.48 O3 (,2.7%) and a low mismatch with SrTiO3 (STO) (,0.6%) allowing the growth of high quality epitaxial PZT thin films. Epitaxial PZT thin films on SRO have previously been prepared by metal-organic chemical vapor deposition,8,9 pulsed a)
Present address: Department of Inorganic Material Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju, 500-757, South Korea.
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J. Mater. Res., Vol. 14, No. 4, Apr 1999
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