Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Elect
- PDF / 290,140 Bytes
- 6 Pages / 432 x 648 pts Page_size
- 48 Downloads / 193 Views
Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Electrostatic Force Microscopy. Rubana Bahar Priti1 and Venkat Bommisetty1 Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA 1
ABSTRACT Hydrogenated nanocrystalline silicon (nc-Si:H) is a promising absorber material for photovoltaic applications. Nanoscale electrical conductivity and overall electronic quality of this material are significantly affected by film microstructure, specifically the density and dimension of grains and grain-boundaries (GB). Local charge distribution at grains and grain/GB interfaces of nc-Si:H was studied by Electrostatic Force Microscopy (EFM) in constant force mode under illumination of white LED. Bias voltage from -3V to +3V was applied on the tip. Scanning Kelvin Force (KFM) images were taken before and after illumination to study the change in surface photovoltage (SP). EFM and KFM analysis were combined with film topography to draw a correlation between surface morphology and nanoscale charge distribution in this material. After illumination, small blister like structures were observed whose size and density increase with time. Raman spectroscopy confirmed these new structures as nanocrystalline silicon. This change was assumed due to relaxation of strained Si-Si bonds as an effect of photo response. Nanocrystalline grain interiors were at lower potential and amorphous grain boundaries were at higher potential for negative bias; it was opposite for positive bias. Change in polarity in bias voltage reversed the polarity of the potential in grains and GBs indicating the dominance of negative type of defects. Further study with current sensing AFM in dark and illumination with variable bias voltages will be able to identify the type and density of defects in grains and grain/GB interfaces. INTRODUCTION Hydrogenated nanocrystalline silicon is a mixed phase material of sub-nanometer scaled Si crystallites embedded in an amorphous matrix [1]. Nc-Si:H thin films are a well-accepted material for cost-effective photovoltaics due to its easy and low-cost fabrication [2]. Although nc-Si:H is not completely recovered from LID which degrades the conductivity of the thin films after being illuminated over a prolonged time [3], it has been proved to be more resilient compared to its amorphous silicon counterparts [4]. One of the distinctive features of nc-Si:H is its complex heterogeneous microstructure consisting of nanometer size grains and amorphous grain boundaries [5]. A heterojunction is formed at the grain/GB interface and charge transport is assumed to be based on electron tunneling through the grains acting as quantum dots [6]. The heterogeneity of the material introduces a random “crystalline-amorphous-crystalline” network of grains and GBs. The material system is modeled as two microscopic diodes connected backto-back because of the differences in the bandgap of crystalline and amorphous regions [7]. It is pr
Data Loading...
