Modeling Low- T C Transition-Edge Sensors Made of NS Bilayers: The Specific Interface Resistance
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Modeling Low‑TC Transition‑Edge Sensors Made of NS Bilayers: The Specific Interface Resistance G. Wang1 · C. L. Chang1,2,3 · M. Lisovenko4,5 · V. Novosad4,6 · J. Pearson4 · V. G. Yefremenko1 · J. Zhang1 Received: 7 August 2019 / Accepted: 20 March 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract One way of making a transition-edge sensor (TES) is by utilizing the proximity effect, in which the TC of a superconducting film is reduced with a normal metal film in metallic contact. The TC of a bilayer TES can be estimated by solving the Usadel equations with given boundary conditions. The classical boundary conditions of a bilayer include a specific interface resistance being temperature-independent. In this paper, we will introduce a temperature-dependent specific interface resistance. By fitting the measured TC data of Ir/Au bilayers from the literature to a TC calculation model, we will compare the fit parameters and fit errors with the temperaturedependent specific interface resistance described in this work and with the classical temperature-independent specific interface resistance. Keywords Proximity effect · Transition-edge sensor · Boundary conditions
1 Introduction A low-TC TES is well motivated for applications in modern fundamental physics, which includes searching for neutrino-less double beta decay (NLDBD) [1, 2] and detecting low-mass dark matter (DM) particles [3, 4]. TES detectors have operational advantages. They can be multiplexed to tens of thousands of channels [5] for scaling up the experimental mass. The sensitivity of a TES scales as a power law of its operational * G. Wang [email protected] 1
High Energy Physics Division, Argonne National Laboratory, Lemont, IL 60439, USA
2
Kavli Institute for Cosmological Physics, University of Chicago, Chicago, IL 60637, USA
3
Department of Astronomy and Astrophysics, University of Chicago, Chicago, IL 60637, USA
4
Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
5
Nanoelectronics Department, Sumy State University, Sumy 40007, Ukraine
6
Physics Division, Argonne National Laboratory, Lemont, IL 60439, USA
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Vol.:(0123456789)
Journal of Low Temperature Physics
temperature [6]. Therefore, a TES with an ultra-low resistive-to-superconducting transition temperature is expected for achieving low energy detection threshold and high energy resolution in experiments searching for NLDBD and detecting DM. By using the proximity effect between a normal metal and a superconductor [7] and the low intrinsic transition temperature of an Ir film [8], the TC of an Ir-based bilayer TES can be tuned down to below 30 mK [9, 10]. In this paper, we report the progresses of the TC calculation of Ir/Au bilayers with an emphasis on the specific interface resistance. In Sect. 2, we summarize the temperature-independent and temperature-dependent specific interface resistances of a normal metal–superconductor bilayer. In Sect. 3, by utilizing a TC calculation model [11] and the measured TC data of Ir/Au
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