Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
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Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch and Holger Juergensen MRS Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 01 / January 1999 DOI: 10.1557/S1092578300000612, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300000612 How to cite this article: R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch and Holger Juergensen (1999). Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor . MRS Internet Journal of Nitride Semiconductor Research, 4, pp e5 doi:10.1557/S1092578300000612 Request Permissions : Click here
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Internet Journal Nitride Semiconductor Research
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor R. A. Talalaev1, E. V. Yakovlev2, S. Yu. Karpov2, Yu. N. Makarov3, O. Schoen4, M. Heuken4, G. Strauch4 and Holger Juergensen4 1Ioffe
Physical-Technical Institute, Ltd (St.Petersburg, Russia), 3Lehrstuhl für Strömungsmechanik, University of Erlangen-Nürnberg, 4AIXTRON AG, 2Soft-Impact
(Received Tuesday, March 9, 1999; accepted Friday, May 28, 1999)
Multiwafer Planetary Reactor is a promising system for large-scale production of heterostructures for LED's based on III-group nitrides. Analysis of chemical processes occurring in the reactor allows one to get insight into specific mechanisms governing growth of nitride based heterostructures. In the present paper results of modeling analysis of MOVPE of InxGa1-xN layers in AIX-200 Reactor and AIX 2000 HT Planetary Reactor are reported. The model used for MOVPE process analysis accounts for gas flow, heat transfer, and multicomponent mass transport along with gas phase and surface chemical reactions. Results of the modeling analysis of In transport and incorporation into the solid phase are compared with experimental data. It is shown that the model predicts reasonably well the In incorporation during MOVPE of InGaN under In/(In+Ga) ratio in the gas phase less than 20%.
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Introduction
MOVPE of group III-nitrides is a growth technology widely used to fabricate heterostructures for green, blue and ultraviolet light emitting and laser diodes [1]. Efficient production of the nitrides based devices requires good reproducibility and reliability of the growth process. Promising results in group III-nitrides growth are obtained using AIX-family MOVPE reactors [2], [3]. One of the key issues in manufacturing of the nitrides based heterostructures is control of In-composition in the InxGa1-xN epitaxial layers. Experimental studies ( [4], [5]) reveal the dependence of indium content in InGaN on growth temperature as we
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