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CRHEA-CNRS, Rue Bernard Gr6gory, Sophia Antipolis, 06560 Valbonne, France ** LERMAT-CNRS, 6 Bd Mar6chal Juin, 14050 Caen Cedex, France * IXL, ENSERB-CNRS, 351 cours de la lib6ration, 33405 Talence, France Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1.G3.59 (1999)

ABSTRACT The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0. 1) alloy is narrow (FWHM _< 50 meV) and the Stokes shift measured by PL excitation is weak (

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