Morphology and property tuning of Te nanostructures in a hydrothermal growth
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Morphology and property tuning of Te nanostructures in a hydrothermal growth Ping Yu1 · Li Zhou1 · Zhengfu Jia1 · Keyue Wu1 · Jingbiao Cui2 Received: 26 June 2020 / Accepted: 5 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Te nanoplates, nanowires, and nanospheres were successfully synthesized by a hydrothermal method with glucose as a surfactant agent. By simply changing the reaction time, the morphology of Te nanostructures can be changed from nanoplates, to nanowires, and ultimately to nanospheres. The samples were studied by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, x-ray photoemission spectroscopy, and photoluminescence measurements. It is found that the reaction time plays an important role in morphology formation and optical properties of Te nanostructures. A possible growth mechanism involving a self-assembly process and Wulff facets theorem is proposed to explain the formation of Te nanoplates, nanowires, and nanospheres. This study presents a simple way to control the morphology of Te nanostructures and their optical properties.
1 Introduction Tellurium is a p-type semiconductor and has been widely used in various applications such as sensors and optoelectronics due to its excellent thermoelectricity, photoconductivity, and piezoelectricity [1]. It is known that the property of a semiconductor can be tuned by manipulating its morphology and structure [2, 3]. To date, one-dimensional Te nanostructures, such as nanowires, nanotubes, and nanobelts, have been synthesized [4]. The properties of onedimensional Te nanostructures have also been studied. In addition, 2D materials have attracted numerous interests and attention owing to their exotic physical and chemical properties distinct from their one-dimensional and bulk counterparties such as the typical 2D materials of graphene [5], MoS2 [6], BN [7], and black phosphorus [8]. Recently, Zhu et al. [9] found that 2D Te is stable in nature with a high carrier mobility as predicted by theoretical calculations. Wang et al. [10] studied the 2D Te-based field-effect transistors with an on/off ratio and carrier mobility up to 1 06 and 700 cm2 V−1 s−1, respectively. Pend et al. [11] reported that the * Keyue Wu [email protected] 1
College of Electrical and Photoelectronic Engineering, West Anhui University, Lu’an 237012, Anhui, China
Department of Physics, University of North Texas, Denton, TX 76203, USA
2
photoresponse of Te nanoplates exhibits a negative behavior when their thickness is less than 5 nm. Qiu et al. [12] reported that the Seebeck coefficient, power factor, and ZT value of Te thin films are 413 μV K −1, 31.7 μW c m−1 K−2, and 0.63, respectively. These recent studies indicate that Te is a potential semiconductor material for applications in several emerging fields. Te nanostructures can be synthesized by many methods such as liquid phase exfoliation (LPE), molecular beam epitaxy (MBE), physical vapor deposition (PVD), and hydrothermal growth [13–16
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