MOVPE of Large-Scale MoS 2 /WS 2 , WS 2 /MoS 2 , WS 2 /Graphene and MoS 2 /Graphene 2D-2D Heterostructures for Optoelect
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MRS Advances © 2020 Materials Research Society DOI: 10.1557/adv.2020.104
MOVPE of Large-Scale MoS2/WS2, WS2/MoS2, WS2/Graphene and MoS2/Graphene 2D-2D Heterostructures for Optoelectronic Applications Annika Grundmann1, Clifford McAleese2, Ben Richard Conran2, Andrew Pakes2, Dominik Andrzejewski3, Tilmar Kümmell3, Gerd Bacher3, Kenneth Boh Khin Teo2, Michael Heuken1,4, Holger Kalisch1 and Andrei Vescan1 1
Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074 Aachen, Germany
2
AIXTRON Ltd., Anderson Road, Swavesey, Cambridge CB24 4FQ, United Kingdom
3 Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg, Germany
4
AIXTRON SE, Dornkaulstr. 2, 52134 Herzogenrath, Germany
ABSTRACT
Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.
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INTRODUCTION: One way of improving the performance of (opto)electronic devices based on single 2D materials is to create heterostructures of two or more 2D materials. Vertical heterostructures of different 2D layers can feature many fascinating properties [1,2], which are not only defined by the constituent monolayers, but also by their interaction. Without the requirement of lattice matching, a nearly infinite number of material combinations are possible that do not exist in nature [3,4]. Transition metal dichalcogenide (TMDC) monolayers are beyond graphene the most widely studied 2D semiconductors and thus provide a strong basis for understanding the properties of 2D2D heterostructures. So far, various combinations of Mo- and W-based TMDC vertical heterostructures and graphene-based heterostructures were fabricated using mechanical exfoliation and stacking of layers deposited by different techniques [5,6,7]. Comparing CVD-grown and mechanically stacked WS2/MoS2 heterostructur
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