n-Type doping of diamond by hot-filament chemical vapor deposition growth with phosphorus incorporation
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n‑Type doping of diamond by hot‑filament chemical vapor deposition growth with phosphorus incorporation Yūki Katamune1 · Daichi Mori1 · Daisuke Arikawa1 · Akira Izumi1 · Takehiro Shimaoka2 · Kimiyoshi Ichikawa2 · Satoshi Koizumi2 Received: 16 August 2020 / Accepted: 6 October 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract Epitaxial growth of n-type semiconductor diamond films on (111)-oriented diamond has been achieved by hot-filament chemical vapor deposition (HFCVD) using a methane source and a trimethylphosphine dopant source. Secondary-ion mass spectrometry showed that the phosphorus atoms are incorporated into the films in the concentration range of 1 018–1019 cm−3 from the vapor phase. Hall-effect measurements confirmed n-type conductivity in a wide temperature range up to 873 K. Electrons are thermally activated from a phosphorus donor level of approximately 0.57 eV as dominant carriers under the presence of tungsten atoms with concentrations of around 1018 cm−3 from filaments. These results indicate that HFCVD has the potential to be applied to an n-type doping process for fabricating diamond electronic devices in the phosphorus concentration range of not lower than 1018 cm−3. Keywords Diamond · n-type doping · Hot-filament CVD · Hall effect · Secondary-ion mass spectrometry
1 Introduction Diamond is an attractive wide-gap semiconductor for highpower and high-frequency devices with high-temperature stability and high-radiation resistance, owing to its excellent physical and electronic properties [1–6]. Diamond-based electronic devices have been recently demonstrated, such as bipolar devices like p-i-n diodes [7, 8] and junction transistors [9, 10], and also unipolar devices like Schottky barrier diodes [11–14], metal–semiconductor field-effect-transistors (FETs) [15, 16], junction FETs [17] and n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) [18]. The control of p- and n-type conduction is an elemental technique for constructing and developing diamond semiconductor devices. An in situ doping technique during * Yūki Katamune [email protected] 1
Department of Electrical and Electronic Engineering, Kyushu Institute of Technology, 1‑1 Sensuicho, Tobata, Kitakyushu, Fukuoka 804‑8550, Japan
Electric and Electronic Materials Field, National Institute for Materials Science, 1‑1 Namiki, Tsukuba, Ibaraki 305‑0044, Japan
2
diamond growth by chemical vapor deposition (CVD) can provide p- and n-type conduction with boron and phosphorus incorporation, respectively. An ion-implantation technique, which is commonly used as a Si-based semiconductor manufacturing technology, is currently applicable only to p-type doping with boron atoms [19]. n-Type doping by ionimplantation with phosphorus atoms has not been achieved because the crystal defects induced by ion injection are unrecoverable [20, 21]. Designing proper p- and n-type layers is beneficial for the characteristics and reliability of electronic devices [22]. Doping boro
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