Nano Focus: Novel method developed to grow graphene on low reactivity metals

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T

he commercial exploitation of the remarkable properties of graphene relies on the development of efficient methods to fabricate the large quantities required for industrial applications. One of the most promising approaches is the epitaxial growth of graphene layers on metals, where chemical vapor deposition can produce large areas of graphene with uniform thickness. However, this technique relies on the metals’ catalytic activity and is expected to be less effective on low reactivity metals. Recently, however, A.J. Martínez-Galera and coresearchers at the Universidad Autónoma de Madrid, Spain, have devised a novel method for preparing graphene on the surface of relatively inert metals, and used this technique to grow high-quality, monolayer graphene films on Cu(111) and Au(111).

The researchers report in the September 14 issue of Nano Letters (DOI: 10.1021/nl201281m; p. 3576) that thermal decomposition of hydrocarbon fragments produced by irradiating a metal surface at high temperature with lowenergy ethylene ions can result in the

formation of graphene on the metal surface. The researchers placed clean metal single crystals as substrates in an ultrahigh vacuum (UHV) chamber at 800°C together with ethylene at high pressure. Irradiation with an ion gun results in lowenergy ethylene ions that are accelerated

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(a) Three graphene flakes grown epitaxially on a Au(111) surface are shown in this scanning tunneling micrograph with area 53 nm × 41 nm. Reconstruction of the herringbone pattern characteristic of the Au(111) pattern is evident. (b) A scanning tunneling micrograph of a portion of defect-free graphene grown on a Au(111) surface displays a honeycomb pattern. Reprinted with permission from Nano Lett. 11 (9) (2011), DOI: 10.1021/nl201281m; p. 3576. © 2011 American Chemical Society.

MRS BULLETIN



VOLUME 36 • NOVEMBER 2011



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+PJO5IFSNP'JTIFS4DJFOUJmDGPSBhands-on workshop using the complementary techniques of advanced Raman spectroscopy and XPS. (FU PVU PG UIF DPME XJUI B 8JOUFS 8BSNFS SFDFQUJPO  JODMVEJOH CFWFSBHFT BOE EFMJDJPVT TOBDLT 3FHJTUFS UP XJO EPPS QSJ[FTUISPVHIPVUUIFFWFOJOH  t*OWFTUJHBUFUIFDIBSBDUFSPGDBSCPOCPOETJOTJOHMFBOE NVMUJXBMMFEOBOPUVCFT t.FBTVSFMBZFSUIJDLOFTTPGHSBQIFOFTIFFUTBOESJCCPOT  RVBOUJGZJOHDPOUBNJOBUJPOPOEJBNPOEMJLFDBSCPOBOE HSBQIFOFTVSGBDFT t&YQMPSFBQQMJDBUJPOTEFWFMPQNFOUGPSOFYUHFOFSBUJPO DBSCPOCBTFEFMFDUSPOJDT t%JTDVTTZPVSBQQMJDBUJPOXJUIPVSFYQFSU"QQMJDBUJPO4DJFOUJTUT POFPOPOF t&WBMVBUFZPVSPXOTBNQMFT  "EWBODFZPVSSFTFBSDIJODBSCPOBOEHSBQIFOF1VUUIFQPXFSPGPVS 914BOE3BNBOJOTUSVNFOUTUPXPSL tWJTJUwww.thermoscientific.com/mrsPSbooth 416 3FTFSWFZPVSTQPUUPEBZ4QBDFJTMJNJUFE

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