Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures
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Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures H. Khlyap University of Technology, E.-Schroedinger str. 56, D-67663 Kaiserslautern, Germany, and State Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine P. Sydorchuk State Pedagogical University, 24 Franko str., 82100 Drohobych, Ukraine ABSTRACT A2B6 semiconductors and their solid solutions (ZnSe, ZnTe, CdTe, ZnCdHgTe) are matter of choice for near- and far-infrared optoelectronics. The importance of maximally reduced degree of defectness for these materials is not subjected to discussion. However, preparation of high quality barrier structures based on these compounds by means of MBE, laser technology or liquid phase technique is not always successful due to lattice parameters mismatch. At the same time, good selection of a proper buffer layer may also pose some unavoidable problems. From this point of view the nanoindentation as a tool of defect engineering can be effective for fabrication of surface barrier structures. The first experimental results and numerical simulation of experimental data obtained under investigation of nanoindentation effect on electric characteristics (in particular, current – voltage (I-V) and capacitance – voltage (C-V)) of ZnCdHgTe thin films and ZnCdHgTe/Cd(Zn)Te heterostructures at the room temperature are presented. INTRODUCTION The practical applications of the semiconductor materials suppose the fabrication and maintenance of the device structures. The technological process of the device preparation often includes the mechanical treatment of single crystals as well as epitaxial layers, especially slicing, dicing, grinding and surfacing. Therefore, the mechanical action (local or distributed) can cause sufficient changes of the original semiconductor material. On the other hand, operation of devices based on semiconductor compounds in real-life environment is also appeared as a ground of different mechanical effects (high pressure of the surrounding environment, vibration etc.) leading to the damage of the active elements. Thus, the investigation of characteristics of semiconductor materials with crystal surface affected mechanically, for example by indenting performed by the prismatic indenter (Fig.1) is seemed to be of particular interest. A2B6 materials [1] (especially, CdTe, ZnTe and their multi-component solid solutions) play an important role in design of optoelectronic active elements and devices for visible and near-IR wavelength range operating in wide temperature range (from 77 to 300 K) and under different extrinsic disturbances, such as the external mechanical influence, various deformations, impacts etc. The presented work reports first results of studies performed for clarifying the effects of mechanical impact modeled by the indentation on important barrier characteristics of heterostructures p-ZnCdHgTe/p-CdTe and metal-semiconductor structures based on CdTe
EXPERIMENTAL Quaternary solid solutions ZnCdHgTe grown by modified LPE technology on monocrystalline (111) Cd
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