Nanoscale Phenomena in Ferroelectric Thin Films
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visu
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NANOSCALEPHENOMENAIN
FERROELECTRIC THIN FILMS
edited by
Seungbum Hong Samsung Advanced Institute ofTechnology, Korea
SPRINGER-SCIENCE+BUSINESS MEDIA, LLC
Library of Congress Cataloging-in-Publication Nanoscale phenomena in ferroelectric thin films 1 edited by Seungbum Hong. p.cm. Includes bibliographical references and index. ISBN 978-1-4020-7630-5 ISBN 978-1-4419-9044-0 (eBook) DOI 10.1007/978-1-4419-9044-0 1. Ferroelectric thin films. 2. Nanostructure materials. 1. Hong, Seungbum TA418.9.T45N35 2003 621.3815'2-dc22 Copyright ©2004 Springer Science+Business Media New York Originally published by Kluwer Academic Publishers in 2004 Softcover reprint of the hardcover 1st edition 2004 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system or transrnitted in any form or by any means, electronic, mechanical, photo-copying, rnicrofilrning, recording, or otherwise, without the prior written perrnission ofthe publisher, with the exception of any material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Perrnissions for books published in the USA: [email protected] Perrnissions for books published in Europe: perrnissions @wkap.nl Printed on acid-free paper.
Table of Contents List of Contributors Preface Acknowledgment
ix xi xiv
Part I. Electrical Characterization in Nanoscale Ferroelectric Capacitor I. Testing and characterization of ferroelectric thin film capacitors In Kyeong. Yoo
1. Test Circuits 2. Hysteretic Property 3. Capacitance and Current. 4. Stored Energy 5. Ageing 6. Fatigue 7. Imprint 8. Leakage Current 9. Electrical Degradation 10. Breakdown 11. Pyroelectric Effect 12. Additional tests for commercial memory cells References
:
3 5 9 9 11 13 14 16 21 22 26 29 37
II. Size effects in ferroelectric film capacitors: role of the film thickness and capacitor size Igo r Stolichnov
1. Introduction 2. Size effects: role of the ferroelectric film thickness, impact of the passive layer and local charge injection 3. Size effects: role of the capacitor size and impact of nonhomogeneou s stress 4. Conclusions and outlook Acknowledgements References
39 .40 48 54 55 55
vi III. Ferroelectric thin films for memory applications: characterization by scanning force microscopy Alexei Gruverman 1. Introduction 2. Experimental Appro ach 3. Variations in Ferroelectric Properties at the nanosc ale 4. PPM studies of retention behavior 5. Nanoscale Leakage Current Mapping 6. Conclusion Acknow ledgment References
nanoscale
57 59 65 74 81 83 84 84
IV. Nanoscale domain dynamics in ferroelectric thin films V. Nagarajan and R. Ramesh 1. Introduction 2. Thin Film Materials and Characterization 3. Polarizatio n Relaxation at the Nanoscale 4. Nanoscale Piezoelectric and Ferroelectric Behavior 5. Conclusions Acknowledgements References
88 89 92 97 106 107 108
V. Polarization switching and fatigue of ferroelectric thin films studied byPFM Seungbum Hong 1. Introduct ion 2. Polarization switchin