New Resistive Materials Based on Iron Disilicide Alloys
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A.E.ENGALYCHEV, M.I.FEDOROV, A.E.KALIAZIN, G.T.ALEKSEEVA A.F.Ioffe
Physical -technical
Institute,
Politekhnicheskaya
26,
194021, St.Petersburg, Russia.
ABSTRACT The
electrical
semiconducting transition
metals
investigated
conductivity
alloys
in
of
and
iron
some
detail.
of
a
disilicide
elements
Wide
number
with
of
of
the
iron
group
Vb
temperature
the
group
have
regions
of
been linear
temperature dependence of resistance were found. The temperature coefficient of resistance
(TCR) in
There
of
is
an
opportunity
these regions
varying
the
is low enough.
resistivity
of
these
alloys by means of modification of the alloy composition. INTRODUCTION The
silicides
variety
of
find
wide
a
(element
their
of
[2,3]
are
silicides
19-FeSi 2
has
a
of
is
VLSI
resistive
linear
They
one
are
Ut-FeSi2 .
semiconductor
because
temperature
other in
displaying a great physical
different
generation materials.
thermoelectrosafe,
One
The
electrical
type
temperature
properties
technologies
[1],
ecologically
widespread
kind of dependence restricts a
and
application
modern etc).
components
used
electrical
field
base
generators
of 3-d transition metals
optical,
of
cheap the
and
widely
conductivity dependence.
of That
the application of the material as
good
dependence
resistive of
materials
electrical
must
have
conductivity
a
with
low enough TCR. In
this
conductivity Me
Ta,V;
paper in
the
the
results
of
a
systems Fe 1 .xMex(Si 1
study
of
i..,,
)2
the
electrical
(Me
Co,Ni;
OSx,ySO.1) are presented.
The samples for measurement were prepared in two stages. In the first stage an ingot in argon
atmosphere.
the material
was
Alumina crucibles annealed at
1000
of material was melted from components
In the second
stage a cylindric sample
obtained by vacuum casting were
used for
both
in a
stages.
KC to convert the material
All
into
quartz samples
of
tube. were
semiconducting
145
Mat. Rem. Soc. Symp. Proc. Vol. 320. 01994 Materials Research Society
phase.
The
homogeneity
of
the
sample
was
controlled
by
metallography and thermopower microprobe analysis. Electrical installation
conductivity
was
measured
by two-probe method. The
error
with
in
automatic
the measurement
was less than 1%.
EXPERIMENTAL RESULTS The more
system
detail.
Fe1
1 Ni 1,(Si1
Fig.1
shows
(xSO0.02) phase
are
There
are
two
temperature
groups
solid solutions
inclusions
dependence
the
(O:5x,ySO.06)
was
studied
dependence
for FeIL- Ni si alloys. In electrical conductivity
electrical conductivity temperature region monotonically.
,,Ta, )2
(close
of
and those
curves. of
to NiSi 2 ). Fig.2
of electrical
conductivity
for
alloys
(x>0.02)
have
the
the
the w-hole increases
The
shows
of
in
of
other
temperature
Fe(Si1 ..YTay) 2
alloys.
The alloys do not contain any inclusions at low concentration of Ta
(ySO.02).
inclusions curves
The
increase
formation. tantalum
when
ele
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