• PDF / 1,455,686 Bytes
• 7 Pages / 585 x 783 pts Page_size
• 101 Downloads / 220 Views

DOWNLOAD

REPORT

---

Introduction Materials that are free of imperfections are rare in nature. Defects and impurities both at surfaces and in bulk dictate the properties, limitations, and reliability of materials.1 Many attempts have been made to exploit defects and maximize their positive impact. One of the earliest approaches was doping, wherein by tuning the impurity concentration, material function was optimized.2 The chemical approach to material control does have drawbacks, however, due to unintended consequences such as reduced lifetimes, mechanical durability, reliability, and the formation of undesired secondary phases. Lack of local control is another drawback to doping, and preferential modification of confined chemical environments or surfaces is highly desired. Many applications today need functional nanoscale materials, which requires control over defect and dopant distributions with atomic-scale precision.3

Scanning probe and charged particle microscopes are capable of local tailoring of dopants and defects with high precision. However, the higher throughput of electron- and ion-based microscopes makes these techniques more enticing for localized doping in large-scale applications. Tools like scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and focused ion beams (FIBs) are far from new; concepts at the heart of these technologies date back to the 1930s with independent efforts by E. Ruska and M. von Ardenne, which created many flavors of electron microscopy and FIBs today. A relatively recent addition to this family is the helium ion microscope (HIM),4 which utilizes a gas field ion source (GFIS) originated by E. Müller in the mid-1950s. Figure 1a shows a cross section of the Carl Zeiss ORION NanoFab— currently the only commercially available HIM—and also able

Alex Belianinov, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; [email protected] Matthew J. Burch, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; [email protected] Songkil Kim, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; [email protected] Shida Tan, Platform Engineering Group, Intel Corporation, USA; [email protected] Gregor Hlawacek, Ion Beam Center, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany; [email protected] Olga S. Ovchinnikova, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, USA; [email protected] doi:10.1557/mrs.2017.185

660

• VOLUME 42 • SEPTEMBERUniversity 2017 • www.mrs.org/bulletin ©use, 2017available MaterialsatResearch Downloaded MRS fromBULLETIN https://www.cambridge.org/core. of Calgary Library, on 15 Sep 2017 at 05:04:07, subject to the Cambridge Core terms of https://www.cambridge.org/core/terms. https://doi.org/10.1557/mrs.2017.185

Society

Noble gas ion beams in materials science for future applications and devices

mechanical treatment of the evolution of the electronic systems of the particles as the distance between particl