Nucleation and evaporation of new domains under the influence of successive electric field in Al-doped KNbO 3 single cry
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Nucleation and evaporation of new domains under the influence of successive electric field in Aldoped KNbO3 single crystal Vivek B. Korde1,* 1
and Naresh M. Patil1
Laxminarayan Institute of Technology, RTM Nagpur University, Nagpur 440033, India
Received: 9 July 2020
ABSTRACT
Accepted: 1 October 2020
Photographic proof of domain wall nucleation was originated on the surface of Al-doped KNbO3 single crystal. For the photographic proof, experiment were performed using a trinocular microscopy technique. Nucleation and evaporation of 60° and 90° domain were conducted under the applied electric field at room temperature which is consistent to the elastic theory of dislocation. An attempt was made by the dislocation model to clarify that the nucleation and evaporation of the domain walls was dependent on impurity dipoles. The appearance of nucleation and evaporation of domains under the influence of electric fields was interestingly studied in domain engineering.
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
1 Introduction Ferroelectric material is a vigorous electronic material in optical and electronic industries [1]. Potassium niobate (KNbO3) crystal received considerable attention for its several applications as a ferroelectric and photorefractive material, from educational and commercial viewpoints [2]. KNbO3 (KN) is a well-known perovskite oxide with the structural formula ABO3 (A: Alkaline earth element B: transition metal element) where Nb resides in the octahedron surrounded by 6 O atoms [3]. These perovskite ABO3 were studied and found to have excellent electrochemical and thermoelectric properties in different metal oxides [4, 5]. A phase transition of ferroelectric material is the main phenomena behind KN single crystal. The performance of KN ferroelectric phase
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https://doi.org/10.1007/s10854-020-04589-9
transition is very much similar to BaTiO3 [6]. Earlier studies have shown that the photorefractive properties can be improved by doping Al to KN single crystal [7]. Several studies were performed to analyse the composition, nucleation and sideways motion of domains, domain imperfection interactions and impurity dipole interactions [8]. These studies were based on Potnis et al.’s admirable analysis of the production of ferroelectric domain and domain microscopic methods [9]. At present, various advanced methods such as AFM, SEM, TEM, XRD and SHGM are practiced. A substantial research on domain morphology was made available through the use of a simple metallurgical reflective microscope and probably by domain wall nucleation tools [10, 11].
J Mater Sci: Mater Electron
In this research, attempts are made to describe a prospective mechanism of domain wall nucleation and mechanism that suggested that impurity dipoles incline to orientate in the path of spontaneous polarization ’Ps’. If the arrangement of dipoles is completely different from that of the Ps, the strain is determined in this position and, to decrease thi
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