Optical and Structural Properties of Mn-Implanted GaN Films
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OPTICAL AND STRUCTURAL PROPERTIES OF Mn-IMPLANTED GaN FILMS J. Xu, J. Li, R. Zhang1, X.Q. Xiu, D.Q. Lu, S.L. Gu, B. Shen, Y. Shi and Y. D. Zheng Department of Physics, Nanjing University, Nanjing, 210093, China
ABSTRACT The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition (MOCVD), with Mn implanted in 150 KeV, which can offer many distinguished advantages compared with other doping methods. A new energy band with a minimum at 2.9 eV in the reflectance spectra has been observed. The yellow band emission was greatly decreased according to the result of photoluminescence. The structure analysis revealed that the Mn doped sample has good crystal quality as the pure GaN after annealed. And further discussions on the role of Mn in GaN: Mn films have been presented.
INTRODUCTION It is well known that one of the attractive new directions both for materials science and device applications will be magnetic-semiconductors which have properties of both magnetic materials and semiconductors. High-density nonvolatile magnetic memory integrated with semiconductor circuits, and optical isolators integrated with semiconductor lasers for optical communication systems are predicted to be among potential applications [1]. Study of diluted magnetic semiconductors (DMSs) started with the II-VI-based compound materials, such as CdTe and ZnS, where the valence of group II cations is identical to that of the common magnetic ions like Mn [2]. However, due to the difficulty in doping of II-VI-based DMSs to p- and n-type, these materials became less attractive for applications [3]. After the realization of (In, Mn) As [4] in 1989 and (Ga, Mn) As [5-6] in 1996, studies on the III-V DMSs have become one of the fascinating subjects in the research fields of semiconductors and magnetic materials. And there are two important reasons to study the preparation of GaN-based DMSs. Firstly, the development of optical communication systems in the visible wavelengths region may require magneto-optical components made of wide band gap materials. Secondly, one of the recent theoretical works has shown that wide band gap semiconductors, GaN and ZnO may be suitable candidates to realize carrier-induced ferromagnetism at room temperature or higher [7].
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However, little research has proceeded in this area. And little is known about the optical and structural properties of deliberately Mn-doped GaN. Furthermore, the doping methods reported only include MOVPE [8] and MBE [9]. In fact the method of ion implantation, which we adopted, can offer some distinguished advantages compared with other methods. First of all, semiconductor materials doped with magnetic components of ultra-high purity can be acquired. And this is a controllable way to obtain DMSs in precise dopant concentration. Furthermore, the process of implantation is compatible with the technology of Integrated Circuit (IC), which makes it convenient to integrate the
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