Optical, electrical and electronic properties of SnS thin films deposited by sol gel spin coating technique for photovol
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Optical, electrical and electronic properties of SnS thin films deposited by sol gel spin coating technique for photovoltaic applications T. Garmim1,* , S. Chahib2, L. Soussi3, R. Mghaiouini1,4, Z. El Jouad1, A. Louardi1, O. Karzazi5, M. El Jouad6, E. K. Hlil7, B. Hartiti8, and M. Monkade1 1
Laboratory of Condensed Matter Physics (LPMC), Department of Physic, Faculty of Sciences, Chouaïb Doukkali University, El-Jadida, Morocco 2 Laboratory of Condensed Matter and Interdisciplinary Sciences (LaMCScI), Department of Physics, Faculty of Sciences, Mohammed V University, Rabat, Morocco 3 Engineering Laboratory of Electrical Systems and Telecommunications, National School of Applied Sciences of Kenitra (ENSAK), Kenitra, Morocco 4 Physical Chemistry Laboratory of Applied Materials, Department of Chemistry, Faculty of Sciences, Ben M’Sik, Hassan II University, Casablanca, Morocco 5 Laboratory of Engineering, Electrochemistry and Modeling Environment (LEEME), Faculty of Sciences, Fez, Morocco 6 Laboratory of Engineering Sciences for Energy, National School of Applied Sciences, Chouaib Doukkali University, El Jadida, Morocco 7 MCBT-UPR CNRS, Néel Institute, Grenoble Alpes University, 38000 Grenoble, France 8 MAC&PM Laboratory, ANEPMAER Group FSTM, Hassan II Casablanca University, B.P 146 Mohamedia, Morocco
Received: 8 July 2020
ABSTRACT
Accepted: 1 October 2020
In the current study, thin films of tin sulfide (SnS) were grown by sol–gel spincoating technique deposited on glass substrates. The obtained thin films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and UV– Vis spectrometer and the four point technique, respectively. The effect of annealing temperature on the SnS properties has been studied. The XRD results reveal that the films annealed at 500 °C have good crystalline quality with orthorhombic phase. Fourier-transform infrared spectroscopy (FTIR) spectra shows the Sn–S bond. The photoluminescence spectra showed two categories of band emission. The optical parameters (a, e, n, k, Eg, and rop) were determined using UV–Vis spectroscopy. Moreover, the obtained results were compared to the theatricals results obtained with density functional theory (DFT) method using ab-initio approach. The optical and the electrical properties of the SnS Layers annealed at 400 °C and 500 °C offer the best possibility for their utilization in photovoltaic applications.
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Springer Science+Business
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https://doi.org/10.1007/s10854-020-04586-y
J Mater Sci: Mater Electron
1 Introduction Recently, the second generation of the photovoltaic cell technology based on thin-films has received considerable attention as a sustainable source of energy, thin film-based photovoltaic technology has been based on semiconductor materials forms absorbents, started to develop the materials, among which the CdTe [1]. However, Cd and Se are toxic ‘‘heavy metals’’ and the In and Ga are expensive elements, which constitute an obstacle
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