Organometallic chemical liquid deposition (OMCLD) of Cu-SiO 2 films for 3D filling in microelectronic applications
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1249-F03-02
Organometallic chemical liquid deposition (OMCLD) of Cu-SiO2 films for 3D filling in microelectronic applications. Kilian Piettre1,2, Virginie Latour1, Olivier Margeat3, Clément Barrière1, Vincent Collière1,4, Christine Anceau2, Jean-Baptiste Quoirin2, Bruno Chaudret1, Pierre Fau*1,4 1
Laboratoire de Chimie de Coordination LCC-CNRS, 205 route de Narbonne, 31077 Toulouse Cedex 04, France 2 STMicroelectronics SAS, 16, rue Pierre et Marie Curie, 37071 Tours, France 3 CINAM-CNRS, Aix Marseille University, Campus de Luminy, 13288 Marseille Cedex 09, France 4 Université de Toulouse (UPS, III), 118 route de Narbonne, 31062 Toulouse Cedex 02, France. * [email protected] ABSTRACT
The copper precursor N,N’-diisopropylacetamidinate has been decomposed at low temperature (80-110°C) in a liquid process under a moderate H2 pressure. Depending on the choice of the solvent, the process leads to a colloidal solution of well controlled copper nanoparticles or the deposition of composite Cu-SiO2 films on the surfaces. The latter layer is highly adhesive to silica surface, behaves as an active seed layer for electroless copper deposition and allows a conformal covering inside deep trenches. INTRODUCTION The miniaturization of microelectronic devices has led to increasing process constraints in the deposition of copper films on complex surfaces like vias or trenches. There is a need for new deposition tools and the organometallic chemistry can bring solutions for the microelectronics processes [1,2]. The development of conformal layers deposited by gas phase processes (CVD, chemical vapor deposition or ALD, atomic layers deposition) have pushed the research towards new classes of organometallic compounds with improved properties [3,4]. The amidinate copper family, explored by the pioneering work of R.G. Gordon [5], has appeared as a good candidate for copper deposition through chemical vapor deposition. Alternatively, liquid route methods for metal layer deposition (electrochemical deposition (ECD) or electroless deposition (EL)), have proven good conformality properties even for trenches with high aspect-ratio. However, such processes can be only carried out on pre-treated surfaces either with electrically conductive layers (for ECD) or sensitized with catalysts for EL [6]. A preparation method based on the decomposition of organometallic precursors in organic solvents has been developed in our team for several years [7,8]. It offers a great versatility in nanoparticle compositions, as well as their shape, size and surface chemistry. The latter parameter is of great interest in the scope of the use of colloidal solution for efficient surface coating. Recently, organometallic chemical liquid deposition process (OMCLD) has also been proposed as an alternative way to prepare metal layers on silicon substrates [9,10]. We present here i) the synthesis of copper nanoparticles obtained from the decomposition in tetrahydrofurane (THF) of N,N’-diisopropylacetamidinate copper and ii) the direct metallization of silicon oxide sur
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