Phosphorus Dopant Diffusion, Activation, and Annealing. Using Infrared Laser for Synthesis of n -Type Silicon Thin Film
- PDF / 3,331,025 Bytes
- 11 Pages / 594 x 792 pts Page_size
- 63 Downloads / 181 Views
Journal of Russian Laser Research, Volume 41, Number 5, September, 2020
PHOSPHORUS DOPANT DIFFUSION, ACTIVATION, AND ANNEALING. USING INFRARED LASER FOR SYNTHESIS OF n-TYPE SILICON THIN FILM M. Abul Hossion,1∗ Som Mondal,2 and B. M. Arora3 1 Department
of Physics BSMR Maritime University Dhaka 1216, Bangladesh 2 Department
of Energy and Environment TERI School of Advanced Studies New Delhi 110070, India 3 Department
of Physics University of Mumbai Mumbai 400098, India
∗ Corresponding
author e-mail:
abulhossion.phy @ bsmrmu.edu.bd
Abstract Thin film of oriented crystalline intrinsic polysilicon films were grown on alkali-free borosilicate glass substrate using hot-wire chemical-vapor-deposition (HWCVD) technique. A layer as a source of phosphorus dopant on top of intrinsic polysilicon films were introduced in two different approaches: (i) spinon one-micrometer-thick phosphorus dopant and (ii) phosphorus ion implantation. We investigate the possibility of dopant diffusion, activation, and annealing, using the irradiation of 1064 nm wavelength infrared laser. The annealing is performed under various conditions. The laser power and scan speed are varied to ensure the suitable laser annealing condition. We carry out resistivity measurements to validate the laser annealing process. For structural investigation, we use several characterization techniques, such as scanning electron microscopy, high-resolution X-ray diffraction, photoluminescence spectroscopy, and confocal Raman spectroscopy measurements. We use optical transmission spectra for determining optical characteristics of the film. The electrical measurement shows that the phosphorous-doped n-type polysilicon films are suitable as an emitter layer in photovoltaic device.
Keywords: Hot-wire chemical vapor deposition (HWCVD), infrared laser, n-type silicon, thin film, ion implantation, spin-on dopant.
1.
Introduction
The polycrystalline silicon thin film on glass for photovoltaic application has become a low-cost solution in the recent years. This reduces the cost and dependence of crystalline-silicon-wafer-based technology in the field of optoelectronics [1]. The growth of polycrystalline silicon film on glass, using low-cost hot-wire chemical-vapor-deposition (HWCVD) technique shows promising alternate method Manuscript submitted by the authors in English on July 21, 2020. c 2020 Springer Science+Business Media, LLC 1071-2836/20/4105-0552 552
Volume 41, Number 5, September, 2020
Journal of Russian Laser Research
over plasma-enhanced chemical-vapor-deposition (PECVD) technology [2, 3]. Though HWCVD technique is regarded as high filament temperature (1600◦ C – 2000◦ C) process but the substrate can be kept at low temperature (200◦ C). Hence a low-temperature growth process is observed with a higher growth rate (16 ˚ A/s) [4]. This feature makes HWCVD compatible with PECVD. The intrinsic silicon-film grown on glass substrate using HWCVD requires impurity doping, followed by dopant activation and annealing, for further application in photovoltaics. There are sever
Data Loading...
