Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region
- PDF / 378,880 Bytes
- 4 Pages / 612 x 792 pts (letter) Page_size
- 18 Downloads / 227 Views
INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region V. V. Utochkina,b, M. A. Fadeeva, S. S. Krishtopenkoc, V. V. Rumyantseva,b, V. Ya. Aleshkina,b, A. A. Dubinova,b, S. V. Morozova,b, B. R. Semyagind, M. A. Putyatod, E. A. Emelyanovd, V. V. Preobrazhenskiid, and V. I. Gavrilenkoa,b,* a
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603087 Russia b Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia c Laboratoire Charles Coulomb, CNRS & Université Montpellier, Montpellier, 34095 France d Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia *e-mail: [email protected] Received April 15, 2020; revised April 21, 2020; accepted April 21, 2020
Abstract—The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure. Keywords: quantum well, InAs/GaInSb, photoluminescence, waveguide heterostructure DOI: 10.1134/S1063782620090304
1. INTRODUCTION The valence-band edge of GaSb is higher in energy than the conduction-band edge of InAs, which makes it possible to control the band gap in quantum-confined InAs/GaSb structures (by varying the layer thicknesses). In symmetric InAs/Ga(In)Sb/InAs quantum wells (QWs) with a W-shaped potential profile, the band extrema are at the Γ point of the Brillouin zone [1]. Abroad, such structures are used for the production of lasers emitting in the mid-infrared (IR) region (see, e.g., [2]). In this study, we make the first attempt to obtain stimulated emission in structures designed and grown in Russia. 2. STRUCTURE TO BE STUDIED The sample to be studied was grown by molecularbeam epitaxy (MBE) on a GaAs(001) substrate at the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences [3]. The active region of the structure was grown on a composite buffer consisting of a 2.4-μm-thick metamorphous GaSb buffer layer (compare with [4]), a ten-period “smoothing” AlSb(2.5 nm)/GaSb(2.5 nm) superlattice, and a 0.6-μm-thick GaSb layer. Then ten AlSb(10 nm)–InAs(3.63 nm)–Ga0.65In0.35Sb (3.05 nm)–InAs(3.63 nm)–AlSb(10 nm) QWs were grown. The thicknesses of the InAs and Ga0.65In0.35Sb layers were chosen to be equal to the integral number
of monolayers (ML), specifically, 12 and 10 ML, respectively. On the top, a 6-nm-thick GaSb cap layer was grown. The band structure, the wave functions (WFs) of electrons and holes, and the matrix elements of the velocity operator for interband transitions were calculated in the context of the four-band Kane model [5]. To provide better agreement with the experimentally recorded photoluminescence (PL) spectra, the thickness of the InAs layers was reduced to 11
Data Loading...
