Piezoelectric Properties of Lead Zirconate Titanate Films Prepared by Arc Discharged Reactive Ion-Plating Method
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0902-T03-05.1
Piezoelectric Properties of Lead Zirconate Titanate Films Prepared by Arc Discharged Reactive Ion-Plating Method Masahiro Akamatsu, Yoshiaki Yasuda, Masanao Tani and Takashi IIjima1 Research & Development Center, Stanley Electric Co., Ltd., 1-3-1 Edanishi, Aoba, Yokohama, Kanagawa 225-0014, Japan 1 Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan ABSTRACT Pb(Zrx,Ti1-x)O3 (PZT) films in a thickness of 3 µm were prepared using an arc discharged reactive ion-plating (ADRIP) method with a deposition rate of 3 µm/h at a substrate temperature of 550˚C. Piezoelectric constants, d31, of the PZT film at x = 0.52 evaluated from tip deflections of PZT cantilevers was -40 pm/V and d33 estimated from displacements of PZT capacitor structures was 193 pm/V. After the poling treatments, the d31 and d33 values were increased to -43 pm/V and 239 pm/V, respectively. As one of applications for this PZT film, a two dimensional (2-D) micro scanner driven by PZT actuators was fabricated.
INTRODUCTION Piezoelectric micro actuators to apply for micro-electromechanical system (MEMS) devices have been attracting much attention. In order to realize those devices, fabrication methods to obtain good quality PZT films with a fast deposition rate and lower substrate temperature are needed. The ADRIP method can prepare PZT films with a deposition rate over 3 µm/h at substrate temperature of 500°C [1]. It promises to provide mass production of good quality PZT films on large size silicon wafers. To examine piezoelectric performances for those PZT films, piezoelectric constants, d31 and d33, were evaluated from tip deflections of PZT unimorph cantilevers and displacements of PZT capacitor structures which were fabricated using a bulk micro machine technique. In order to apply the PZT films prepared using the ADRIP method for MEMS devices, we have been developing 2-D resonance type optical scanners.
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EXPERIMENTAL DETAILS O2
Plasma Gun
Heater Substrate
Ar He
Plasma Ti
Pb Zr
Evaporation Source
Figure 1. Schematic diagram of the ADRIP apparatus. Figure 2. SEM image of the cantilevers.
The apparatus fabricating PZT films is comprised of the vacuum chamber, the plasma gun and the evaporation sources of Pb, Ti and Zr metals (Fig.1). A characteristic feature of the ADRIP method is that high density arc-discharged plasma generated from the plasma gun can promote a crystal growth on a substrate. The details about the ADRIP apparatus and deposition conditions have been previously reported [2]. In the present study, PZT films were deposited on Pt (150 nm)/Ti (50 nm)/SiO2 (500 nm)/SOI substrates with a deposition rate at 3µm/h and a substrate temperature at 550°C. The bottom electrode (Pt and Ti) was prepared using an rf magnetron sputtering at a room temperature. Polycrystalline single phase perovskite structures for the prepared films were confirmed using an X-ray diffraction method. Polarization – e
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