Planar Hall effect in electrodeposited CoCu/Cu multilayer
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Planar Hall effect in electrodeposited CoCu/Cu multilayer Anjana Dogra · P. Chowdhury · S.K. Ghosh · S.K. Gupta · G. Ravikumar
Received: 8 December 2012 / Accepted: 2 January 2013 / Published online: 19 January 2013 © Springer-Verlag Berlin Heidelberg 2013
Abstract Electrodeposited CoCu/Cu multilayers were investigated by measuring both anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) simultaneously. Studies have been carried out on a [Co(3 nm)/Cu(4 nm)]50 multilayer sample, where a maximum of −8.8 % GMR was observed at room temperature. A direct comparison of AMR and PHE output has been made both as a function of field and its relative orientation with respect to the current. Marked changes in PHE loops were observed at different angles (between magnetic field and applied current) whereas no noticeable changes could be found for AMR results. Such PHE outputs are the manifestations of complex spin reorganization due to strong antiferromagnetic-coupling between adjacent magnetic layers. In case of angular dependence output, when the applied field is less than the coercive field, the PHE output shows a deviation from the Sin2θ dependence that can be correlated to the domain wall propagation.
A. Dogra · P. Chowdhury · S.K. Gupta · G. Ravikumar Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India Present address: A. Dogra () National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India e-mail: [email protected] Fax: +91-11-45609310 A. Dogra e-mail: [email protected] Present address: P. Chowdhury National Aerospace Laboratory, Bangaluru, India S.K. Ghosh Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400 085, India
1 Introduction Since the discovery of giant magnetoresistance (GMR) in magnetic multilayers, there has been considerable interest in this phenomenon in view of several potential device applications. It is well known that the exchange coupling between the adjacent magnetic layers oscillates between positive and negative depending upon the thickness of the intervening metallic layer [1, 2]. GMR is produced when the separation between the adjacent ferromagnetic (FM) layers is such that the exchange coupling is negative resulting in antiparallel magnetization orientation of the adjacent FM layers. More interesting information about the exchange coupling could be obtained by highlighting the study of the reversal process in a magnetic field, whose direction can vary in film plane. In fact, this kind of study is usually difficult to perform by most of the conventional magnetic measurements such as magnetometry or susceptibility, since these measurements projects only on the net magnetization in the direction of applied field. Rather much simpler and powerful methods like anisotropic magnetoresistance (AMR) and Planar Hall Effect (PHE), which can be simultaneously measured could throw some light on the direction of magnetization in the film plane. Interestingly, PHE is known to be very sensitive to the manner in which the ma
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