Poly-SiGe for MEMS-above-CMOS Sensors
Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. Th
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Pilar González Ruiz Kristin De Meyer Ann Witvrouw
Poly-SiGe for MEMS-aboveCMOS Sensors
Springer Series in Advanced Microelectronics Volume 44
Series Editors Kiyoo Itoh, Kokubunji-shi, Tokyo, Japan Thomas H. Lee, Stanford CA, USA Takayasu Sakurai, Minato-ku, Tokyo, Japan Willy M. Sansen, Leuven, Belgium Doris Schmitt-Landsiedel, Munich, Germany
For further volumes: http://www.springer.com/series/4076
The Springer Series in Advanced Microelectronics provides systematic information on all the topics relevant for the design, processing, and manufacturing of microelectronic devices. The books, each prepared by leading researchers or engineers in their fields, cover the basic and advanced aspects of topics such as wafer processing, materials, device design, device technologies, circuit design, VLSI implementation, and subsystem technology. The series forms a bridge between physics and engineering and the volumes will appeal to practicing engineers as well as research scientists.
Pilar González Ruiz Kristin De Meyer Ann Witvrouw •
Poly-SiGe for MEMS-above-CMOS Sensors
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Ann Witvrouw Department of Metallurgy and Material Engineering KU Leuven Leuven Belgium
Pilar González Ruiz CMOS System Department IMEC Leuven Belgium Kristin De Meyer Corporate Technology Office IMEC Leuven Belgium
ISSN 1437-0387 ISBN 978-94-007-6798-0 DOI 10.1007/978-94-007-6799-7
ISBN 978-94-007-6799-7
(eBook)
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