Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE
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0955-I07-40
Position-Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE Taihei Yamaguchi1, Tsutomu Araki1, Hiroyuki Naoi2, and Yasushi Nanishi1,2 1
Dept. of Photonics, Ritsumeikan Univ., 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
2
Center for Promotion of The 21st Century COE Program, Ritsumeikan Univ., 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan ABSTRACT We report on the growth of self-aligned InN nano-dots on nano-patterned GaN templates by electron cyclotron resonance plasma-excited molecular beam epitaxy (ECR-MBE). In the fabrication of the nano-dots, InN was grown on GaN templates with reticular patterns of holes, which were prepared by the focused ion beam (FIB) technique. The InN nano-dots were formed selectively at the holes, resulting in the reticular array of InN nano-dos. The size of InN dots was controlled by varying the hole-pitch and the growth temperature. Furthermore, the shape of InN dots improved by thermal annealing after the growth. We have succeeded in controlling the position and size of InN nano-dots on nano-patterned substrates. Typically, InN nano-dots with a diameter of 50 nm and a height of 10 nm were fabricated in 410°C growth. INTRODUCTION There is a great interest in nanoscale semiconductor structures such as quantum wells, wires, and dots for future applications to electronic and optoelectronic devices. In particular, semiconductor quantum dots (QDs) have been studied actively because they can act as efficient electron-hole recombination centers, increasing the emission efficiency of optical devices. On the other hand, indium nitride (InN) has recently attracted much attention as a promising material for applications to high-speed electronic devices because of its high potentials, such as the smallest effective mass, the highest saturation velocity, and the largest mobility in III-nitride semiconductors. This material is also promising as a material for long-wavelength optical devices, due to the recently found small band gap energy of ~0.65 eV [1-5] as well as large conduction band offsets expected between InN and other III-nitrides (AlN and GaN) [6]. It is believed that InN QDs offer further possibilities for the realization of high efficiency infrared emitters consisting of III-nitride semiconductors, which includes temperature-insensitive high-efficiency laser diodes for optical communication. There are a number of reports on InN QD growth by metalorganic vapor phase epitaxy (MOVPE) [7-10] and MBE [11-13]. Most of the
fabrication methods of InN QDs use self-organizing phenomena. In particular, the Stranski-Krastanov (SK) mode growth is the most commonly used fabrication method of InN QDs. Although the SK mode growth is useful because of its simplicity, it is difficult to control the position and size of InN QDs. For device fabrication, the reproducibility of sizes and the exact positioning of QDs are strongly required. In this paper, we report on the position and size controlled InN nano-dot growth by electron cyclotron resonance plasma-excited m
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