Possibility of Quasi-Single-Crystalline Semiconductor Films
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213 Mat. Res. Soc. Symp. Proc. Vol. 557 ©1999 Materials Research Society
been reported as well as improving the crystallinity, which affects the device characteristics. [15] More precise control of single-crystalline large grains with a uniform distribution and with the preferred orientation is required.
Fig. 1 TEM micrograph of location-controlled poly-crystalline Si grains obtained after SPC. 2. QSC AS A NEW CRYSTALLINE PHASE FOR TETRAHEDRAL SILICON FILMS We posit a novel semiconductor Quasi-Single-Crystalline (QSC) phase between singlecrystalline and poly-crystalline phase, and we propose the existence of the QSC for tetrahedral silicon films. For the QSC semiconductor phase, the films consist of single-crystalline grains with a diamond structure of tetrahedral elements, such as Si, Ge and C, and the grains have a preferred orientation, such as or normal to the film. The lattices perpendicular to the grain boundaries are quasi-matched with neighboring grains. The grains in the films form a regular array, and are distributed more uniformly than in conventional poly-crystalline semiconductor films. In the case of QSC films with orientation, the grains form a square-based shape, as shown in Fig.2. The Si films are made of substantially single-crystalline grains which are preferentially {100} face oriented, have a square-based shape, and are closely aligned in rows and
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Fig.2 Schematic figure of array for QSC with orientation.
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