Preparation and characterization of sputtered TiB 2 films
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Subhash C. Gujrathi and Kenneth Oxorn Laboratoire de Physique Nucleaire, Universite de Montreal, C.P. 6128, Succursale A, Montreal, Quebec, Canada H3C 3J7 (Received 27 December 1989; accepted 11 January 1991) Smooth, continuous TiB2 films were deposited on TiB2-AlN composites and Si substrates by sputtering in high vacuum. Excellent adhesion between films and substrates was indicated; no film delamination was induced by Vickers indentation at high loads. Analyses by secondary ion mass and x-ray photoelectron spectroscopies showed that the films were of high purity and contained H, C, O, N, and Na elements as trace impurities. Quantitative depth profile by the elastic recoil detection (ERD) nuclear scattering technique using 30 MeV 35C1 beam revealed that the Ti/B atomic ratio was very close to 0.5 while the 10B/nB isotopic ratio was 0.250.
I. INTRODUCTION
Titanium diboride is a very hard, brittle, refractory compound which strongly resists erosion and shows metallic luster and good electrical conductivity. Its preparation in dense, polycrystalline form is difficult and sintering aids are required to promote the densification process. Alternative ways of TiB2 synthesis utilize various deposition techniques. One such technique utilizes electrodeposition from a molten alkali metal borate bath,1 but the resulting coatings are granular. The use of chemical vapor deposition from halide vapors has also been reported in the literature.2"4 The requirements of relatively higher temperatures in the range of 1400° to 1600 °C2 were subsequently lowered in the techniques reported in the latter references.3'4 Another low temperature deposition technique,5 developed specifically for electronic application, utilizes the decomposition of borohydrides to produce TiB2 films at temperatures
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