Preparation of highly oriented Pb(Zr 0.52 Ti 0.48 )O 3 thin films by sol-gel-hydrothermal process
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Preparation of highly oriented Pb(Zr0.52Ti0.48)O3 thin films by sol-gel-hydrothermal process Jianming Zenga) and Chenglu Lin National Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 Changning Road, 200050 Shanghai, People’s Republic of China
Jinhua Li and Kun Li Department of Applied Chemistry, Jiangsu Institute of Petrochemical Technology, 213016 Changzhou, People’s Republic of China (Received 17 November 1998; accepted 29 March 1999)
A novel sol-gel-hydrothermal process for preparation of highly oriented thin films of Pb(Zr0.52Ti0.48)O3 is reported. Pb(Zr0.52Ti0.48)O3 thin films with fully (111) orientation were successfully prepared on platinized silicon substrates at low temperature (100–200 °C) by combining a conventional sol-gel process and hydrothermal method, i.e., sol-gel-hydrothermal technique. The x-ray rocking curve for the (111) reflection as measured by a high-resolution four-crystal diffractrometer showed a narrow full width at half-maximum value of 0.20° for the as-prepared films. A dense, pinhole-free, and uniform surface morphology was observed from atomic force microscopy images of the films. The low leakage current density of the prepared films was also found.
Recently, there has been considerable scientific and technological interest in applying thin films of ferroelectrics to device applications,1–4 where the unique nature of ferroelectric, piezoelectric, pyroelectric, and electrooptic properties could be utilized. In particular, lead zirconate titanate (PZT) is well known to be a promising material for integrated memories, optical, and microelectromechanical devices because of its excellent ferroelectric, optical, and pyroelectric properties.5 Many thin film deposition techniques have been developed to prepare PZT thin films, including pulsed laser deposition,6,7 metalorganic chemical vapor deposition,8,9 sputtering,10 metalorganic deposition,11 and, more recently, sol-gel.11–15 Of these techniques, the sol-gel process has attracted much attention because of the relative ease of thin film composition control, simple process, and the potential for deposition of homogeneous films over large areas. However, all these techniques, including the sol-gel process, require high processing temperature (500 °C or above) for crystallization, which inevitably results in undesirable interdiffusion and interreaction between thin films and substrates.16–18 Such interdiffusion degrades properties of the films and hinders the integration with semiconductor integrated circuits. Thus, interest in finding solua)
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J. Mater. Res., Vol. 14, No. 7, Jul 1999 Downloaded: 29 Mar 2015
tions to overcome the difficulty of interdiffusion has been increasing. An important mild chemical approach, the hydrothermal method, has been developed to overcome the difficulty of high processing temperature in o
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